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Conference Paper: Improved properties of Ge MOS capacitors with HfTiON or HfTiO gate dielectric by using wet-NO ge-surface pretreatment

TitleImproved properties of Ge MOS capacitors with HfTiON or HfTiO gate dielectric by using wet-NO ge-surface pretreatment
Authors
Issue Date2008
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Citation
The 2008 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, China, 8-10 December 2008. In Conference Proceedings, 2008, p. 1-4 How to Cite?
AbstractHfTiO/GeOxNy and HfTiON/GeOxNy stack gate dielectrics are prepared by using wet-NO or wet-N2O pretreatment on Ge substrate. Experimental results show that the wet NO pretreatment can lead to excellent interface properties, gate leakage properties and device reliability, especially for the HfTiON/GeOxNy dielectric. The involved mechanisms lie in the roles of N in blocking oxygen diffusion and Ge out-diffusion and suitable N incorporation in the GeO xNy interlayer, which effectively suppress further growth of GeOxNy interlayer and the growth of unstable GeO x during subsequent processing. © 2008 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/61944
ISBN
References

 

DC FieldValueLanguage
dc.contributor.authorLi, CXen_HK
dc.contributor.authorZou, Xen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2010-07-13T03:50:43Z-
dc.date.available2010-07-13T03:50:43Z-
dc.date.issued2008en_HK
dc.identifier.citationThe 2008 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, China, 8-10 December 2008. In Conference Proceedings, 2008, p. 1-4en_HK
dc.identifier.isbn978-1-4244-2540-2-
dc.identifier.urihttp://hdl.handle.net/10722/61944-
dc.description.abstractHfTiO/GeOxNy and HfTiON/GeOxNy stack gate dielectrics are prepared by using wet-NO or wet-N2O pretreatment on Ge substrate. Experimental results show that the wet NO pretreatment can lead to excellent interface properties, gate leakage properties and device reliability, especially for the HfTiON/GeOxNy dielectric. The involved mechanisms lie in the roles of N in blocking oxygen diffusion and Ge out-diffusion and suitable N incorporation in the GeO xNy interlayer, which effectively suppress further growth of GeOxNy interlayer and the growth of unstable GeO x during subsequent processing. © 2008 IEEE.en_HK
dc.languageengen_HK
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853-
dc.relation.ispartofIEEE Conference on Electron Devices and Solid-State Circuits Proceedingsen_HK
dc.rightsIEEE Conference on Electron Devices and Solid-State Circuits Proceedings. Copyright © IEEE.-
dc.rights©2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleImproved properties of Ge MOS capacitors with HfTiON or HfTiO gate dielectric by using wet-NO ge-surface pretreatmenten_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/EDSSC.2008.4760737en_HK
dc.identifier.scopuseid_2-s2.0-63249097663en_HK
dc.identifier.hkuros164343en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-63249097663&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage1-
dc.identifier.epage4-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridZou, X=23020170400en_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.customcontrol.immutablesml 140527-

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