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Conference Paper: Modeling of scattering at high-k dielectric/SiO2 interface of strained SiGe MOSFETs

TitleModeling of scattering at high-k dielectric/SiO2 interface of strained SiGe MOSFETs
Authors
Zhang, XFXu, JPLai, PTZou, XLi, CX
Issue Date2007
Citation
Icsict-2006: 2006 8Th International Conference On Solid-State And Integrated Circuit Technology, Proceedings, 2007, p. 1343-1345 How to Cite?
DOI: http://dx.doi.org/10.1109/ICSICT.2006.306155
AbstractA physical model describing the scattering behavior of holes in the channel of SiGe MOSFET due to interface roughness and remote charged defects of the high-k dielectric/SiO2 interface is proposed. Using the Fang-Howard's variational wave function, the hole mobility is calculated by considering the above two scattering mechanisms. Simulated results are in good agreement with experimental data. © 2006 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/99442
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZhang, XFen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorZou, Xen_HK
dc.contributor.authorLi, CXen_HK
dc.date.accessioned2010-09-25T18:30:23Z-
dc.date.available2010-09-25T18:30:23Z-
dc.date.issued2007en_HK
dc.identifier.citationIcsict-2006: 2006 8Th International Conference On Solid-State And Integrated Circuit Technology, Proceedings, 2007, p. 1343-1345en_HK
dc.identifier.urihttp://hdl.handle.net/10722/99442-
dc.description.abstractA physical model describing the scattering behavior of holes in the channel of SiGe MOSFET due to interface roughness and remote charged defects of the high-k dielectric/SiO2 interface is proposed. Using the Fang-Howard's variational wave function, the hole mobility is calculated by considering the above two scattering mechanisms. Simulated results are in good agreement with experimental data. © 2006 IEEE.en_HK
dc.languageengen_HK
dc.relation.ispartofICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedingsen_HK
dc.titleModeling of scattering at high-k dielectric/SiO2 interface of strained SiGe MOSFETsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/ICSICT.2006.306155en_HK
dc.identifier.scopuseid_2-s2.0-34547274257en_HK
dc.identifier.hkuros135802en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34547274257&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage1343en_HK
dc.identifier.epage1345en_HK
dc.identifier.scopusauthoridZhang, XF=14627948200en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridZou, X=23020170400en_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK

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