File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Improved reliability of Ge MOS capacitor with HfTiON high-k dielelctric by using Ge surface pretreatment in wet NO

TitleImproved reliability of Ge MOS capacitor with HfTiON high-k dielelctric by using Ge surface pretreatment in wet NO
Authors
KeywordsCapacitance-voltage characterization
Ge MOS
High-k dielectric
Pretreatment
Issue Date2007
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/mee
Citation
Microelectronic Engineering, 2007, v. 84 n. 9-10, p. 2340-2343 How to Cite?
AbstractHigh-quality Ge MOS capacitors with HfTiON as high-k gate dielectric are fabricated by using Ge surface pretreatment in wet NH3, N2O, NO and N2 ambients. The wet-NO pretreatment is found to be the best for improving the reliability properties of the Ge MOS capacitor, with smallest increases of interface-state density, leakage current and flat-band voltage after electrical stress. © 2007 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155371
ISSN
2015 Impact Factor: 1.277
2015 SCImago Journal Rankings: 0.551
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLi, CXen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.date.accessioned2012-08-08T08:33:07Z-
dc.date.available2012-08-08T08:33:07Z-
dc.date.issued2007en_HK
dc.identifier.citationMicroelectronic Engineering, 2007, v. 84 n. 9-10, p. 2340-2343en_HK
dc.identifier.issn0167-9317en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155371-
dc.description.abstractHigh-quality Ge MOS capacitors with HfTiON as high-k gate dielectric are fabricated by using Ge surface pretreatment in wet NH3, N2O, NO and N2 ambients. The wet-NO pretreatment is found to be the best for improving the reliability properties of the Ge MOS capacitor, with smallest increases of interface-state density, leakage current and flat-band voltage after electrical stress. © 2007 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/meeen_HK
dc.relation.ispartofMicroelectronic Engineeringen_HK
dc.subjectCapacitance-voltage characterizationen_HK
dc.subjectGe MOSen_HK
dc.subjectHigh-k dielectricen_HK
dc.subjectPretreatmenten_HK
dc.titleImproved reliability of Ge MOS capacitor with HfTiON high-k dielelctric by using Ge surface pretreatment in wet NOen_HK
dc.typeArticleen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.mee.2007.04.049en_HK
dc.identifier.scopuseid_2-s2.0-34248669598en_HK
dc.identifier.hkuros150298-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34248669598&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume84en_HK
dc.identifier.issue9-10en_HK
dc.identifier.spage2340en_HK
dc.identifier.epage2343en_HK
dc.identifier.isiWOS:000247378600117-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats