Browsing by Author rp00660

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TitleAuthor(s)Issue Date
 
The effect of the temperature dependence of the ideality factor on metal-semiconductor solar devices
Journal:Semiconductor Science and Technology
Lee, TCChen, TPAu, HLFung, SBeling, CD
1993
 
The effect of thermal annealing on the properties of indium tin oxide thin films
Proceeding/Conference:Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Wang, RXBeling, CDFung, SDjurišić, ABKwong, CLi, S
2005
 
Effects of annealing on the electrical properties of Fe-doped InP
Journal:Journal of Applied Physics
Zhao, YWFung, SBeling, CDSun, NFSun, TNChen, XDYang, GY
1999
 
EL2 deep donor state in semi-insulating GaAs revealed by frequency dependent positron mobility measurements
Journal:Physical Review Letters
Au, HLLing, CCPanda, BKLee, TCBeling, CDFung, S
1994
 
EL2 deep-level transient study in semi-insulating GaAs using positron-lifetime spectroscopy
Journal:Physical Review B (Condensed Matter)
Shan, YYLing, CCDeng, AHPanda, BKBeling, CDFung, S
1997
 
Electric field effect on the diffusion modified AlGaAs/GaAs single quantum well
Journal:Journal of Applied Physics
Panda, SPanda, BKFung, SBeling, CD
1996
 
Electric field of a buried interfacial region measured by positron-lifetime spectroscopy
Journal:Applied Physics A: Materials Science and Processing
Shek, YFLing, CCBeling, CDFung, S
2002
 
Electric-field distribution in Au–semi-insulating GaAs contact investigated by positron-lifetime technique
Journal:Physical Review B (Condensed Matter)
Ling, FCCShek, YFHuang, APFung, SHYBeling, CD
1999
 
Electrical and FT-IR measurements of undoped N-type INP materials grown from various stoichiometric melts
Proceeding/Conference:Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Chen, XDSun, NFSun, TNLiu, SLYang, GYZhao, YWXu, XLBeling, CDFung, S
1998
 
Electrical conduction in annealed semi-insulating InP
Journal:Journal of Applied Physics
Fung, SZhao, YWLuo, YLBeling, CD
2000
 
Electrical transport properties of annealed undoped InP
Journal:Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Zhao, YLuo, YSun, NFeng, SBeling, CDSun, TLin, L
2002
 
Electrically induced metastability in SI-GaAs studied by positron lifetime spectroscopy
Proceeding/Conference:Materials Science Forum
Luo, YLBeling, CDFung, SLing, CCLui, MKMui, WK
2001
 
Electrically induced room temperature metastability in semi-insulating GaAs
Journal:Solid State Communications
Fung, SLuo, YLBeling, CDChen, TP
1998
 
Electron emission from deep level defects EL2 and EL6 in semi-insulating GaAs observed by positron drift velocity transient measurements
Journal:Journal of Applied Physics
Tsia, JMLing, CCBeling, CDFung, S
2002
 
Electron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence
Journal:Journal of Physics Condensed Matter
Ma, SKLui, MKLing, CCFung, SBeling, CDLi, KFCheah, KWGong, MHang, HSWeng, HM
2004
 
Electron momentum distribution in semiconductors: A comparative study of the Compton profile and positron angular correlation methods
Proceeding/Conference:Materials Science Forum
Panda, BKFung, SBeling, CD
1997
 
Electron-irradiation-induced deep levels in n-type 6H–SiC
Journal:Journal of Applied Physics
Gong, MFung, SHYBeling, CDYou, Z
1999
 
Electron-positron momentum density in diamond, Si, and Ge
Journal:Physical Review B (Condensed Matter)
Panda, BKFung, SBeling, CD
1996
 
Electron-positron momentum distributions and positron lifetime in semiconductors in the generalized gradient approximation
Journal:Physical Review B (Condensed Matter)
Panda, BKLiMing, WFung, SBeling, CD
1997
 
Electronic stability and noise reduction in Doppler broadening spectroscopy systems
Journal:Applied Surface Science
Ching, HMZhang, JDBeling, CDFung, S
2002
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