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Article: Electric field of a buried interfacial region measured by positron-lifetime spectroscopy

TitleElectric field of a buried interfacial region measured by positron-lifetime spectroscopy
Authors
Issue Date2002
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A: Materials Science And Processing, 2002, v. 74 n. 2, p. 233-237 How to Cite?
AbstractPositrons from a radioactive source are implanted into a reverse-biased metal-semiconductor contact and are drifted back towards the contact by the internal electric field where they trap into voids and annihilate. The electric field dependent interface annihilation fraction is monitored by way of the intensity of the long (∼ 400-500 ps) void lifetime component using positron-lifetime spectroscopy. Unlike previous analyses of such systems a numerical model involving positron drift, annihilation and trapping into the interfacial state has been constructed to describe the positron dynamics in the presence of the non-uniform junction electric field. The use of the positron-lifetime technique in probing the internal electric field at buried contacts is thus demonstrated. Results obtained using the numerical method for the Au, Al and Ni/Semi-Insulating (SI)-GaAs contact systems are found to be consistent with the findings of previous studies on the Au/SI-GaAs system.
Persistent Identifierhttp://hdl.handle.net/10722/80551
ISSN
2015 Impact Factor: 1.444
2015 SCImago Journal Rankings: 0.535
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorShek, YFen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-09-06T08:07:41Z-
dc.date.available2010-09-06T08:07:41Z-
dc.date.issued2002en_HK
dc.identifier.citationApplied Physics A: Materials Science And Processing, 2002, v. 74 n. 2, p. 233-237en_HK
dc.identifier.issn0947-8396en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80551-
dc.description.abstractPositrons from a radioactive source are implanted into a reverse-biased metal-semiconductor contact and are drifted back towards the contact by the internal electric field where they trap into voids and annihilate. The electric field dependent interface annihilation fraction is monitored by way of the intensity of the long (∼ 400-500 ps) void lifetime component using positron-lifetime spectroscopy. Unlike previous analyses of such systems a numerical model involving positron drift, annihilation and trapping into the interfacial state has been constructed to describe the positron dynamics in the presence of the non-uniform junction electric field. The use of the positron-lifetime technique in probing the internal electric field at buried contacts is thus demonstrated. Results obtained using the numerical method for the Au, Al and Ni/Semi-Insulating (SI)-GaAs contact systems are found to be consistent with the findings of previous studies on the Au/SI-GaAs system.en_HK
dc.languageengen_HK
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_HK
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_HK
dc.titleElectric field of a buried interfacial region measured by positron-lifetime spectroscopyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0947-8396&volume=74&spage=233&epage=237&date=2002&atitle=Electric+field+of+a+buried+interfacial+region+measured+by+positron-lifetime+spectroscopyen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s003390100875en_HK
dc.identifier.scopuseid_2-s2.0-0036477499en_HK
dc.identifier.hkuros65267en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036477499&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume74en_HK
dc.identifier.issue2en_HK
dc.identifier.spage233en_HK
dc.identifier.epage237en_HK
dc.identifier.isiWOS:000174223800017-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridShek, YF=8321845400en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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