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Article: EL2 deep-level transient study in semi-insulating GaAs using positron-lifetime spectroscopy

TitleEL2 deep-level transient study in semi-insulating GaAs using positron-lifetime spectroscopy
Authors
KeywordsPhysics
Issue Date1997
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 1997, v. 55 n. 12, p. 7624-7628 How to Cite?
AbstractPositron lifetime measurements performed on Au/GaAs samples at room temperature with an applied square-wave ac bias show a frequency dependent interlace related lifetime intensity that peaks around 0.4 Hz. The observation is explained by the ionization of the deep-donor level EL2 to EL2+ in the GaAs region adjacent to the Au/GaAs interface, causing a transient electric field to be experienced by positrons drifting towards the interface. Without resorting to temperature scanning or any Arrhenius plot the EL2 donor level is found to be located 0.80±0.01±0.05 eV below the conduction-band minimum, where the first error estimate is statistical and the second systematic. The result suggests positron annihilation may, in some instances, act as an alternative to capacitance transient spectroscopies in characterizing deep levels in both semiconductors and semi-insulators.
Persistent Identifierhttp://hdl.handle.net/10722/43186
ISSN
2001 Impact Factor: 3.07
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorShan, YYen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorDeng, AHen_HK
dc.contributor.authorPanda, BKen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2007-03-23T04:40:56Z-
dc.date.available2007-03-23T04:40:56Z-
dc.date.issued1997en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 1997, v. 55 n. 12, p. 7624-7628en_HK
dc.identifier.issn0163-1829en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43186-
dc.description.abstractPositron lifetime measurements performed on Au/GaAs samples at room temperature with an applied square-wave ac bias show a frequency dependent interlace related lifetime intensity that peaks around 0.4 Hz. The observation is explained by the ionization of the deep-donor level EL2 to EL2+ in the GaAs region adjacent to the Au/GaAs interface, causing a transient electric field to be experienced by positrons drifting towards the interface. Without resorting to temperature scanning or any Arrhenius plot the EL2 donor level is found to be located 0.80±0.01±0.05 eV below the conduction-band minimum, where the first error estimate is statistical and the second systematic. The result suggests positron annihilation may, in some instances, act as an alternative to capacitance transient spectroscopies in characterizing deep levels in both semiconductors and semi-insulators.en_HK
dc.format.extent130308 bytes-
dc.format.extent28160 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsPhysical Review B (Condensed Matter). Copyright © American Physical Society.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysicsen_HK
dc.titleEL2 deep-level transient study in semi-insulating GaAs using positron-lifetime spectroscopyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0163-1829&volume=55&issue=12&spage=7624&epage=7628&date=1997&atitle=EL2+deep-level+transient+study+in+semi-insulating+GaAs+using+positron-lifetime+spectroscopyen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.55.7624en_HK
dc.identifier.scopuseid_2-s2.0-0000995998en_HK
dc.identifier.hkuros21926-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000995998&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume55en_HK
dc.identifier.issue12en_HK
dc.identifier.spage7624en_HK
dc.identifier.epage7628en_HK
dc.identifier.isiWOS:A1997WQ43400056-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridShan, YY=7203036700en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridDeng, AH=7006160354en_HK
dc.identifier.scopusauthoridPanda, BK=22963418500en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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