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Conference Paper: The effect of thermal annealing on the properties of indium tin oxide thin films

TitleThe effect of thermal annealing on the properties of indium tin oxide thin films
Authors
KeywordsITO
Post-annealing
Thin film
Issue Date2005
PublisherIEEE.
Citation
Proceedings of 2004 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 04), The University of Queensland, Brisbane, Australia, 8-10 December 2004, p. 57-60 How to Cite?
AbstractITO thin films were deposited on glass substrates using e-beam evaporation. The influence of post-deposition annealing on the optical properties of the films was investigated in detail. It was found that the annealing conditions strongly affect the optical properties of the films. The transmittance of films annealed in forming gas (mixed 80% N 2 and H 2) at first increases dramatically with increasing annealing temperatures up to 300°C but then drops for higher temperature anneals around 400°C. An interesting phenomenon is that the transmittance of the darkened film can recover under further 400°C annealing in air. Atomic force microscopy, X-ray diffraction and X-ray photoemission spectroscopy have been employed to obtain information on the chemical state and crystallization of the films. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to reversibly change the optical properties of the ITO thin film. © 2005 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/54217
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorWang, RXen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorKwong, Cen_HK
dc.contributor.authorLi, Sen_HK
dc.date.accessioned2009-04-03T07:39:59Z-
dc.date.available2009-04-03T07:39:59Z-
dc.date.issued2005en_HK
dc.identifier.citationProceedings of 2004 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 04), The University of Queensland, Brisbane, Australia, 8-10 December 2004, p. 57-60en_HK
dc.identifier.issn1097-2137en_HK
dc.identifier.urihttp://hdl.handle.net/10722/54217-
dc.description.abstractITO thin films were deposited on glass substrates using e-beam evaporation. The influence of post-deposition annealing on the optical properties of the films was investigated in detail. It was found that the annealing conditions strongly affect the optical properties of the films. The transmittance of films annealed in forming gas (mixed 80% N 2 and H 2) at first increases dramatically with increasing annealing temperatures up to 300°C but then drops for higher temperature anneals around 400°C. An interesting phenomenon is that the transmittance of the darkened film can recover under further 400°C annealing in air. Atomic force microscopy, X-ray diffraction and X-ray photoemission spectroscopy have been employed to obtain information on the chemical state and crystallization of the films. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to reversibly change the optical properties of the ITO thin film. © 2005 IEEE.en_HK
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMADen_HK
dc.rights©2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectITOen_HK
dc.subjectPost-annealingen_HK
dc.subjectThin filmen_HK
dc.titleThe effect of thermal annealing on the properties of indium tin oxide thin filmsen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1097-2137&volume=&spage=57&epage=60&date=2004&atitle=The+effect+of+thermal+annealing+on+the+properties+of+indium+tin+oxide+thin+filmsen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/COMMAD.2004.1577491en_HK
dc.identifier.scopuseid_2-s2.0-46149086360en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-46149086360&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage57en_HK
dc.identifier.epage60en_HK
dc.identifier.scopusauthoridWang, RX=22136651200en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridKwong, C=35917741900en_HK
dc.identifier.scopusauthoridLi, S=35732983000en_HK

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