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Conference Paper: The effect of thermal annealing on the properties of indium tin oxide thin films
Title | The effect of thermal annealing on the properties of indium tin oxide thin films |
---|---|
Authors | |
Keywords | ITO Post-annealing Thin film |
Issue Date | 2005 |
Publisher | IEEE. |
Citation | Proceedings of 2004 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 04), The University of Queensland, Brisbane, Australia, 8-10 December 2004, p. 57-60 How to Cite? |
Abstract | ITO thin films were deposited on glass substrates using e-beam evaporation. The influence of post-deposition annealing on the optical properties of the films was investigated in detail. It was found that the annealing conditions strongly affect the optical properties of the films. The transmittance of films annealed in forming gas (mixed 80% N 2 and H 2) at first increases dramatically with increasing annealing temperatures up to 300°C but then drops for higher temperature anneals around 400°C. An interesting phenomenon is that the transmittance of the darkened film can recover under further 400°C annealing in air. Atomic force microscopy, X-ray diffraction and X-ray photoemission spectroscopy have been employed to obtain information on the chemical state and crystallization of the films. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to reversibly change the optical properties of the ITO thin film. © 2005 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/54217 |
ISSN | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, RX | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.contributor.author | Djurišić, AB | en_HK |
dc.contributor.author | Kwong, C | en_HK |
dc.contributor.author | Li, S | en_HK |
dc.date.accessioned | 2009-04-03T07:39:59Z | - |
dc.date.available | 2009-04-03T07:39:59Z | - |
dc.date.issued | 2005 | en_HK |
dc.identifier.citation | Proceedings of 2004 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 04), The University of Queensland, Brisbane, Australia, 8-10 December 2004, p. 57-60 | en_HK |
dc.identifier.issn | 1097-2137 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/54217 | - |
dc.description.abstract | ITO thin films were deposited on glass substrates using e-beam evaporation. The influence of post-deposition annealing on the optical properties of the films was investigated in detail. It was found that the annealing conditions strongly affect the optical properties of the films. The transmittance of films annealed in forming gas (mixed 80% N 2 and H 2) at first increases dramatically with increasing annealing temperatures up to 300°C but then drops for higher temperature anneals around 400°C. An interesting phenomenon is that the transmittance of the darkened film can recover under further 400°C annealing in air. Atomic force microscopy, X-ray diffraction and X-ray photoemission spectroscopy have been employed to obtain information on the chemical state and crystallization of the films. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to reversibly change the optical properties of the ITO thin film. © 2005 IEEE. | en_HK |
dc.language | eng | en_HK |
dc.publisher | IEEE. | en_HK |
dc.relation.ispartof | Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD | en_HK |
dc.rights | ©2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | - |
dc.subject | ITO | en_HK |
dc.subject | Post-annealing | en_HK |
dc.subject | Thin film | en_HK |
dc.title | The effect of thermal annealing on the properties of indium tin oxide thin films | en_HK |
dc.type | Conference_Paper | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1097-2137&volume=&spage=57&epage=60&date=2004&atitle=The+effect+of+thermal+annealing+on+the+properties+of+indium+tin+oxide+thin+films | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.email | Djurišić, AB: dalek@hku.hk | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.identifier.authority | Djurišić, AB=rp00690 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1109/COMMAD.2004.1577491 | en_HK |
dc.identifier.scopus | eid_2-s2.0-46149086360 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-46149086360&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.spage | 57 | en_HK |
dc.identifier.epage | 60 | en_HK |
dc.identifier.scopusauthorid | Wang, RX=22136651200 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.scopusauthorid | Djurišić, AB=7004904830 | en_HK |
dc.identifier.scopusauthorid | Kwong, C=35917741900 | en_HK |
dc.identifier.scopusauthorid | Li, S=35732983000 | en_HK |
dc.identifier.issnl | 1097-2137 | - |