File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Electric-field distribution in Au–semi-insulating GaAs contact investigated by positron-lifetime technique

TitleElectric-field distribution in Au–semi-insulating GaAs contact investigated by positron-lifetime technique
Authors
KeywordsPhysics
Issue Date1999
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter and Materials Physics), 1999, v. 59 n. 8, p. 5751-5758 How to Cite?
AbstractPositron-lifetime spectroscopy has been used to investigate the electric-field distribution occurring at the Au–semi-insulating GaAs interface. Positrons implanted from a 22Na source and drifted back to the interface are detected through their characteristic lifetime at interface traps. The relative intensity of this fraction of interface-trapped positrons reveals that the field strength in the depletion region saturates at applied biases above 50 V, an observation that cannot be reconciled with a simple depletion approximation model. The data, are, however, shown to be fully consistent with recent direct electric-field measurements and the theoretical model proposed by McGregor et al. [J. Appl. Phys. 75, 7910 (1994)] of an enhanced EL2+ electron-capture cross section above a critical electric field that causes a dramatic reduction of the depletion region’s net charge density. Two theoretically derived electric field profiles, together with an experimentally based profile, are used to estimate a positron mobility of ∼95±35 cm2 V-1 s-1 under the saturation field. This value is higher than previous experiments would suggest, and reasons for this effect are discussed.
Persistent Identifierhttp://hdl.handle.net/10722/43260
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLing, FCCen_HK
dc.contributor.authorShek, YFen_HK
dc.contributor.authorHuang, APen_HK
dc.contributor.authorFung, SHYen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2007-03-23T04:42:22Z-
dc.date.available2007-03-23T04:42:22Z-
dc.date.issued1999en_HK
dc.identifier.citationPhysical Review B (Condensed Matter and Materials Physics), 1999, v. 59 n. 8, p. 5751-5758en_HK
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43260-
dc.description.abstractPositron-lifetime spectroscopy has been used to investigate the electric-field distribution occurring at the Au–semi-insulating GaAs interface. Positrons implanted from a 22Na source and drifted back to the interface are detected through their characteristic lifetime at interface traps. The relative intensity of this fraction of interface-trapped positrons reveals that the field strength in the depletion region saturates at applied biases above 50 V, an observation that cannot be reconciled with a simple depletion approximation model. The data, are, however, shown to be fully consistent with recent direct electric-field measurements and the theoretical model proposed by McGregor et al. [J. Appl. Phys. 75, 7910 (1994)] of an enhanced EL2+ electron-capture cross section above a critical electric field that causes a dramatic reduction of the depletion region’s net charge density. Two theoretically derived electric field profiles, together with an experimentally based profile, are used to estimate a positron mobility of ∼95±35 cm2 V-1 s-1 under the saturation field. This value is higher than previous experiments would suggest, and reasons for this effect are discussed.en_HK
dc.format.extent163358 bytes-
dc.format.extent28160 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B (Condensed Matter and Materials Physics)-
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysicsen_HK
dc.titleElectric-field distribution in Au–semi-insulating GaAs contact investigated by positron-lifetime techniqueen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=59&issue=8&spage=5751&epage=5758&date=1999&atitle=Electric-field+distribution+in+Au–semi-insulating+GaAs+contact+investigated+by+positron-lifetime+techniqueen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.59.5751en_HK
dc.identifier.scopuseid_2-s2.0-4244134723-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-4244134723&selection=ref&src=s&origin=recordpage-
dc.identifier.volume59-
dc.identifier.issue8-
dc.identifier.spage5751-
dc.identifier.epage5758-
dc.identifier.isiWOS:000078959900064-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridLing, CC=13310239300-
dc.identifier.scopusauthoridShek, YF=8321845400-
dc.identifier.scopusauthoridHuang, AP=7402307122-
dc.identifier.scopusauthoridFung, S=7201970040-
dc.identifier.scopusauthoridBeling, CD=7005864180-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats