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Article: Electron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence

TitleElectron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence
Authors
Issue Date2004
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcm
Citation
Journal Of Physics Condensed Matter, 2004, v. 16 n. 34, p. 6205-6212 How to Cite?
AbstractElectron irradiated undoped liquid encapsulated Czochralski (LEC) grown GaSb samples were studied by positron lifetime spectroscopy (PLS) and photoluminescence (PL). In addition to the 315 ps component reported in the previous studies, another defect with a lifetime of 280 ps was also identified in the present electron irradiated samples. The bulk lifetime of the GaSb material was found to be 258 ps. The VGa,280 ps and the V Ga,315 ps defects were associated with two independent Ga vacancy related defects having different microstructures. The well known 777 meV PL signal (usually band A) was also observed in the electron irradiated undoped GaSb samples. The band A intensity decreases with increasing electron irradiation dosage and it disappears after the 300°C annealing regardless of the irradiation dosage. The origin of the band A signal is also discussed.
Persistent Identifierhttp://hdl.handle.net/10722/81047
ISSN
2015 Impact Factor: 2.209
2015 SCImago Journal Rankings: 0.812
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorMa, SKen_HK
dc.contributor.authorLui, MKen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorLi, KFen_HK
dc.contributor.authorCheah, KWen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorHang, HSen_HK
dc.contributor.authorWeng, HMen_HK
dc.date.accessioned2010-09-06T08:13:10Z-
dc.date.available2010-09-06T08:13:10Z-
dc.date.issued2004en_HK
dc.identifier.citationJournal Of Physics Condensed Matter, 2004, v. 16 n. 34, p. 6205-6212en_HK
dc.identifier.issn0953-8984en_HK
dc.identifier.urihttp://hdl.handle.net/10722/81047-
dc.description.abstractElectron irradiated undoped liquid encapsulated Czochralski (LEC) grown GaSb samples were studied by positron lifetime spectroscopy (PLS) and photoluminescence (PL). In addition to the 315 ps component reported in the previous studies, another defect with a lifetime of 280 ps was also identified in the present electron irradiated samples. The bulk lifetime of the GaSb material was found to be 258 ps. The VGa,280 ps and the V Ga,315 ps defects were associated with two independent Ga vacancy related defects having different microstructures. The well known 777 meV PL signal (usually band A) was also observed in the electron irradiated undoped GaSb samples. The band A intensity decreases with increasing electron irradiation dosage and it disappears after the 300°C annealing regardless of the irradiation dosage. The origin of the band A signal is also discussed.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcmen_HK
dc.relation.ispartofJournal of Physics Condensed Matteren_HK
dc.titleElectron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescenceen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0953-8984&volume=16&spage=6205&epage=6212&date=2004&atitle=Electron+irradiated+liquid+encapsulated+Czochralski+grown+undoped+gallium+antimonide+studied+by+positron+lifetime+spectroscopy+and+photoluminescenceen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0953-8984/16/34/019en_HK
dc.identifier.scopuseid_2-s2.0-4444289325en_HK
dc.identifier.hkuros91996en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-4444289325&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume16en_HK
dc.identifier.issue34en_HK
dc.identifier.spage6205en_HK
dc.identifier.epage6212en_HK
dc.identifier.isiWOS:000223904000021-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridMa, SK=7403725465en_HK
dc.identifier.scopusauthoridLui, MK=7004991693en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridLi, KF=7404989771en_HK
dc.identifier.scopusauthoridCheah, KW=7102792922en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridHang, HS=7006055292en_HK
dc.identifier.scopusauthoridWeng, HM=7102468725en_HK

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