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Article: Electron-irradiation-induced deep levels in n-type 6H–SiC

TitleElectron-irradiation-induced deep levels in n-type 6H–SiC
Authors
KeywordsPhysics engineering
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1999, v. 85 n. 11, p. 7604-7608 How to Cite?
AbstractThe fluence-dependent properties and the annealing behavior of electron-irradiation-induced deep levels in n-type 6H–SiC have been studied using deep-level transient spectroscopy (DLTS). Sample annealing reveals that the dominant DLTS signal at EC – 0.36 eV (labeled as E1 by others) consists of two overlapping deep levels (labeled as ED3L and ED3H). The breakup temperature of the defect ED3L is about 700 °C. The ED3H center together with another deep level located at EC – 0.44 eV (so-called E2) can withstand high-temperature annealing up to 1600 °C. It is argued that the involvement of the defect ED3L is the reason that various concentration ratios of E1/E2 were observed in the previous work. The revised value of the capture cross section of the deep-level ED3H has been measured after removing ED3L by annealing. A deep level found at EC – 0.50 eV is identified as a vacancy–impurity complex since it was found to have a lower saturated concentration and weak thermal stability. Two other deep levels, EC – 0.27 eV and EC – 0.32 eV, which were not observed by others because of the carrier freeze-out effect, are also reported. ©1999 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42190
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorGong, Men_HK
dc.contributor.authorFung, SHYen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorYou, Zen_HK
dc.date.accessioned2007-01-08T02:31:19Z-
dc.date.available2007-01-08T02:31:19Z-
dc.date.issued1999en_HK
dc.identifier.citationJournal of Applied Physics, 1999, v. 85 n. 11, p. 7604-7608en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42190-
dc.description.abstractThe fluence-dependent properties and the annealing behavior of electron-irradiation-induced deep levels in n-type 6H–SiC have been studied using deep-level transient spectroscopy (DLTS). Sample annealing reveals that the dominant DLTS signal at EC – 0.36 eV (labeled as E1 by others) consists of two overlapping deep levels (labeled as ED3L and ED3H). The breakup temperature of the defect ED3L is about 700 °C. The ED3H center together with another deep level located at EC – 0.44 eV (so-called E2) can withstand high-temperature annealing up to 1600 °C. It is argued that the involvement of the defect ED3L is the reason that various concentration ratios of E1/E2 were observed in the previous work. The revised value of the capture cross section of the deep-level ED3H has been measured after removing ED3L by annealing. A deep level found at EC – 0.50 eV is identified as a vacancy–impurity complex since it was found to have a lower saturated concentration and weak thermal stability. Two other deep levels, EC – 0.27 eV and EC – 0.32 eV, which were not observed by others because of the carrier freeze-out effect, are also reported. ©1999 American Institute of Physics.en_HK
dc.format.extent96906 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physics-
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleElectron-irradiation-induced deep levels in n-type 6H–SiCen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=85&issue=11&spage=7604&epage=7608&date=1999&atitle=Electron-irradiation-induced+deep+levels+in+n-type+6H–SiCen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.370561en_HK
dc.identifier.scopuseid_2-s2.0-0001671118-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0001671118&selection=ref&src=s&origin=recordpage-
dc.identifier.volume85-
dc.identifier.issue11-
dc.identifier.spage7604-
dc.identifier.epage7608-
dc.identifier.isiWOS:000080354300016-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridGong, M=9273057400-
dc.identifier.scopusauthoridFung, S=7201970040-
dc.identifier.scopusauthoridBeling, CD=7005864180-
dc.identifier.scopusauthoridYou, Z=7102207882-

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