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Article: EL2 deep donor state in semi-insulating GaAs revealed by frequency dependent positron mobility measurements

TitleEL2 deep donor state in semi-insulating GaAs revealed by frequency dependent positron mobility measurements
Authors
KeywordsPhysics
Issue Date1994
PublisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org
Citation
Physical Review Letters, 1994, v. 73 n. 20, p. 2732-2735 How to Cite?
AbstractPositron mobility measurements carried out on semi-insulating GaAs, using the Doppler shift in annihilation radiation technique, show a sharp transition from a high mobility value ∼120 cm2 V-1 s-1 to a lower value ∼45 V-1 s-1 just below room temperature. The temperature of the transition is found to be dependent on the frequency of the applied AC bias. We show that this effect is an artifact due to the thermal ionization of the EL2 deep donor state, which in its ionized state forms a positive space charge that causes the positron to experience large electric fields. This observation suggests a new positron annihilation-based deep-level transient technique applicable to semi-insulating materials. © 1994 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/42183
ISSN
2015 Impact Factor: 7.645
2015 SCImago Journal Rankings: 3.731
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorAu, HLen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorPanda, BKen_HK
dc.contributor.authorLee, TCen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2007-01-08T02:31:11Z-
dc.date.available2007-01-08T02:31:11Z-
dc.date.issued1994en_HK
dc.identifier.citationPhysical Review Letters, 1994, v. 73 n. 20, p. 2732-2735en_HK
dc.identifier.issn0031-9007en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42183-
dc.description.abstractPositron mobility measurements carried out on semi-insulating GaAs, using the Doppler shift in annihilation radiation technique, show a sharp transition from a high mobility value ∼120 cm2 V-1 s-1 to a lower value ∼45 V-1 s-1 just below room temperature. The temperature of the transition is found to be dependent on the frequency of the applied AC bias. We show that this effect is an artifact due to the thermal ionization of the EL2 deep donor state, which in its ionized state forms a positive space charge that causes the positron to experience large electric fields. This observation suggests a new positron annihilation-based deep-level transient technique applicable to semi-insulating materials. © 1994 The American Physical Society.en_HK
dc.format.extent403725 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.orgen_HK
dc.relation.ispartofPhysical Review Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsPhysical Review Letters. Copyright © American Physical Society.en_HK
dc.subjectPhysicsen_HK
dc.titleEL2 deep donor state in semi-insulating GaAs revealed by frequency dependent positron mobility measurementsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0031-9007&volume=73&issue=20&spage=2732&epage=2735&date=1994&atitle=EL2+Deep+Donor+State+in+Semi-Insulating+GaAs+Revealed+by+Frequency+Dependent+Positron+Mobility+Measurementsen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevLett.73.2732en_HK
dc.identifier.pmid10057178en_HK
dc.identifier.scopuseid_2-s2.0-3743056389en_HK
dc.identifier.hkuros3332-
dc.identifier.volume73en_HK
dc.identifier.issue20en_HK
dc.identifier.spage2732en_HK
dc.identifier.epage2735en_HK
dc.identifier.isiWOS:A1994PQ93200024-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridAu, HL=7004152230en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridPanda, BK=22963418500en_HK
dc.identifier.scopusauthoridLee, TC=36347141200en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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