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Article: Electrically induced room temperature metastability in semi-insulating GaAs
Title | Electrically induced room temperature metastability in semi-insulating GaAs |
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Authors | |
Issue Date | 1998 |
Publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc |
Citation | Solid State Communications, 1998, v. 108 n. 12, p. 907-911 How to Cite? |
Abstract | An electrically induced metastable state of the Al/SI-GaAs/Al back-to-back system is reported for the first time. The state is measured by placing the system under reverse bias breakdown conditions and its transient decay observed through conductivity measurements at room temperature. Similar, but not identical metastabilities were also found on Ti/SI-GaAs/Ti and Au/SI-GaAs/Au systems. The objective of this paper is to report on these findings. © 1998 Elsevier Science Ltd. All rights reserved. |
Persistent Identifier | http://hdl.handle.net/10722/80812 |
ISSN | 2023 Impact Factor: 2.1 2023 SCImago Journal Rankings: 0.414 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Fung, S | en_HK |
dc.contributor.author | Luo, YL | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.contributor.author | Chen, TP | en_HK |
dc.date.accessioned | 2010-09-06T08:10:33Z | - |
dc.date.available | 2010-09-06T08:10:33Z | - |
dc.date.issued | 1998 | en_HK |
dc.identifier.citation | Solid State Communications, 1998, v. 108 n. 12, p. 907-911 | en_HK |
dc.identifier.issn | 0038-1098 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/80812 | - |
dc.description.abstract | An electrically induced metastable state of the Al/SI-GaAs/Al back-to-back system is reported for the first time. The state is measured by placing the system under reverse bias breakdown conditions and its transient decay observed through conductivity measurements at room temperature. Similar, but not identical metastabilities were also found on Ti/SI-GaAs/Ti and Au/SI-GaAs/Au systems. The objective of this paper is to report on these findings. © 1998 Elsevier Science Ltd. All rights reserved. | en_HK |
dc.language | eng | en_HK |
dc.publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc | en_HK |
dc.relation.ispartof | Solid State Communications | en_HK |
dc.title | Electrically induced room temperature metastability in semi-insulating GaAs | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0038-1098&volume=108&spage=907&epage=911&date=1998&atitle=Electrically+Induced+Room+Temperature+Metastability+in+Semi-Insulating+GaAs | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.scopus | eid_2-s2.0-0032205563 | en_HK |
dc.identifier.hkuros | 39289 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0032205563&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 108 | en_HK |
dc.identifier.issue | 12 | en_HK |
dc.identifier.spage | 907 | en_HK |
dc.identifier.epage | 911 | en_HK |
dc.identifier.isi | WOS:000077637700003 | - |
dc.publisher.place | United Kingdom | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.scopusauthorid | Luo, YL=55187936600 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.scopusauthorid | Chen, TP=36442234400 | en_HK |
dc.identifier.issnl | 0038-1098 | - |