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Article: Electrical conduction in annealed semi-insulating InP

TitleElectrical conduction in annealed semi-insulating InP
Authors
KeywordsPhysics engineering
Issue Date2000
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2000, v. 87 n. 8, p. 3838-3842 How to Cite?
AbstractVariable-temperature current-voltage has been used to study the conduction properties of Fe-doped semi-insulating (SI) InP in the as-grown and annealed states. It is found that the trap-filling (TF) process disappears gradually with lengthening of annealing time. This phenomenon is explained by the decrease of the concentration of the empty Fe deep level (Fe 3+) that is caused by the thermally induced donor defect formation. The TF process cannot be observed in annealed undoped and long-time annealed Fe-doped SI InP material. The breakdown field of annealed undoped and Fe-doped SI InP is much lower than that of as-grown Fe-doped InP material. The breakdown field decreases with decreasing of temperature indicating an impact ionization process. This breakdown behavior is also in agreement with the fact that the concentration of the empty deep level in annealed InP is lowered. © 2000 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42195
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorFung, Sen_HK
dc.contributor.authorZhao, YWen_HK
dc.contributor.authorLuo, YLen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2007-01-08T02:31:24Z-
dc.date.available2007-01-08T02:31:24Z-
dc.date.issued2000en_HK
dc.identifier.citationJournal Of Applied Physics, 2000, v. 87 n. 8, p. 3838-3842en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42195-
dc.description.abstractVariable-temperature current-voltage has been used to study the conduction properties of Fe-doped semi-insulating (SI) InP in the as-grown and annealed states. It is found that the trap-filling (TF) process disappears gradually with lengthening of annealing time. This phenomenon is explained by the decrease of the concentration of the empty Fe deep level (Fe 3+) that is caused by the thermally induced donor defect formation. The TF process cannot be observed in annealed undoped and long-time annealed Fe-doped SI InP material. The breakdown field of annealed undoped and Fe-doped SI InP is much lower than that of as-grown Fe-doped InP material. The breakdown field decreases with decreasing of temperature indicating an impact ionization process. This breakdown behavior is also in agreement with the fact that the concentration of the empty deep level in annealed InP is lowered. © 2000 American Institute of Physics.en_HK
dc.format.extent76210 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleElectrical conduction in annealed semi-insulating InPen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=87&issue=8&spage=3838&epage=3842&date=2000&atitle=Electrical+conduction+in+annealed+semi-insulating+InPen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.372422en_HK
dc.identifier.scopuseid_2-s2.0-0037753218en_HK
dc.identifier.hkuros48421-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037753218&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume87en_HK
dc.identifier.issue8en_HK
dc.identifier.spage3838en_HK
dc.identifier.epage3842en_HK
dc.identifier.isiWOS:000086169500034-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridZhao, YW=55231668600en_HK
dc.identifier.scopusauthoridLuo, YL=55187936600en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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