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Article: Electric field effect on the diffusion modified AlGaAs/GaAs single quantum well

TitleElectric field effect on the diffusion modified AlGaAs/GaAs single quantum well
Authors
KeywordsPhysics engineering
Issue Date1996
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1996, v. 80 n. 3, p. 1532-1540 How to Cite?
AbstractThe electron subband energies and wave functions in an interdiffusion-induced Al xGa 1-xAs/GaAs/Al xGa 1-xAs single quantum well are calculated in the presence of the dc electric field using the finite difference method. The mean lifetimes are obtained from the time-dependent probability of tunneling of the wave packet out of the well by the applied electric field. The effect of the applied electric field on the subband energies in the well is the same as in the as-grown square quantum well when the interdiffusion length is below 20 Å. In the well with higher diffusion length the barrier height reduces so that the wave function tunnels out of the well. The linear and nonlinear intersubband absorption coefficients and the change in the real part of the index of refraction are calculated with the applied electric field at 100 kV/cm and without the field in both the as-grown square well and the diffusion modified well with the interdiffusion length at 20 Å. © 1996 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42175
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorPanda, Sen_HK
dc.contributor.authorPanda, BKen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2007-01-08T02:31:01Z-
dc.date.available2007-01-08T02:31:01Z-
dc.date.issued1996en_HK
dc.identifier.citationJournal Of Applied Physics, 1996, v. 80 n. 3, p. 1532-1540en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42175-
dc.description.abstractThe electron subband energies and wave functions in an interdiffusion-induced Al xGa 1-xAs/GaAs/Al xGa 1-xAs single quantum well are calculated in the presence of the dc electric field using the finite difference method. The mean lifetimes are obtained from the time-dependent probability of tunneling of the wave packet out of the well by the applied electric field. The effect of the applied electric field on the subband energies in the well is the same as in the as-grown square quantum well when the interdiffusion length is below 20 Å. In the well with higher diffusion length the barrier height reduces so that the wave function tunnels out of the well. The linear and nonlinear intersubband absorption coefficients and the change in the real part of the index of refraction are calculated with the applied electric field at 100 kV/cm and without the field in both the as-grown square well and the diffusion modified well with the interdiffusion length at 20 Å. © 1996 American Institute of Physics.en_HK
dc.format.extent157658 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleElectric field effect on the diffusion modified AlGaAs/GaAs single quantum wellen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=80&issue=3&spage=1532&epage=1540&date=1996&atitle=Electric+field+effect+on+the+diffusion+modified+AlGaAs/GaAs+single+quantum+wellen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.362948en_HK
dc.identifier.scopuseid_2-s2.0-0000238737en_HK
dc.identifier.hkuros14453-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000238737&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume80en_HK
dc.identifier.issue3en_HK
dc.identifier.spage1532en_HK
dc.identifier.epage1540en_HK
dc.identifier.isiWOS:A1996VA59400041-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridPanda, S=55419719000en_HK
dc.identifier.scopusauthoridPanda, BK=22963418500en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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