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Conference Paper: Electrical and FT-IR measurements of undoped N-type INP materials grown from various stoichiometric melts

TitleElectrical and FT-IR measurements of undoped N-type INP materials grown from various stoichiometric melts
Authors
KeywordsPhysics
Optics
Issue Date1998
PublisherIEEE.
Citation
The 10th International Conference on Indium Phosphide and Related Materials Proceedings, Tsukuba, Japan, 11-15 May 1998, p. 42-44 How to Cite?
AbstractP-rich, In-rich and Stoichiometric undoped InP melts have been synthesed by phosphorus in-situ injection method. InP crystal ingots have been grown from these melts by Liquid Encapsulated Czochralski (LEC). Samples from these ingots grown from various Stoichiometric melts have been characterized by Hall Effect and Fourier Transform Infrared (FT-IR) spectroscopy measurements respectively. The Hall Effect measurement results indicate that the net carrier concentration of P-inch undoped InP is higher than that of In-rich and Stoichiometric undoped InP materials. FT-IR spectroscopy measurements reveal that there are intensive absorption peaks which have been proved to be hydrogen related indium vacancy complex V InH 4. By comparing FT-IR spectra, it is found that P-rich InP material has the most intensive absorption peak of V InH 4, while In-rich InP material has the weakest absorption peak.
Persistent Identifierhttp://hdl.handle.net/10722/47035
ISSN

 

DC FieldValueLanguage
dc.contributor.authorChen, XDen_HK
dc.contributor.authorSun, NFen_HK
dc.contributor.authorSun, TNen_HK
dc.contributor.authorLiu, SLen_HK
dc.contributor.authorYang, GYen_HK
dc.contributor.authorZhao, YWen_HK
dc.contributor.authorXu, XLen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2007-10-30T07:04:57Z-
dc.date.available2007-10-30T07:04:57Z-
dc.date.issued1998en_HK
dc.identifier.citationThe 10th International Conference on Indium Phosphide and Related Materials Proceedings, Tsukuba, Japan, 11-15 May 1998, p. 42-44en_HK
dc.identifier.issn1092-8669en_HK
dc.identifier.urihttp://hdl.handle.net/10722/47035-
dc.description.abstractP-rich, In-rich and Stoichiometric undoped InP melts have been synthesed by phosphorus in-situ injection method. InP crystal ingots have been grown from these melts by Liquid Encapsulated Czochralski (LEC). Samples from these ingots grown from various Stoichiometric melts have been characterized by Hall Effect and Fourier Transform Infrared (FT-IR) spectroscopy measurements respectively. The Hall Effect measurement results indicate that the net carrier concentration of P-inch undoped InP is higher than that of In-rich and Stoichiometric undoped InP materials. FT-IR spectroscopy measurements reveal that there are intensive absorption peaks which have been proved to be hydrogen related indium vacancy complex V InH 4. By comparing FT-IR spectra, it is found that P-rich InP material has the most intensive absorption peak of V InH 4, while In-rich InP material has the weakest absorption peak.en_HK
dc.format.extent270426 bytes-
dc.format.extent13983 bytes-
dc.format.extent5932 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofConference Proceedings - International Conference on Indium Phosphide and Related Materialsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.subjectPhysicsen_HK
dc.subjectOpticsen_HK
dc.titleElectrical and FT-IR measurements of undoped N-type INP materials grown from various stoichiometric meltsen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1092-8669&volume=&spage=42&epage=44&date=1998&atitle=Electrical+and+FT-IR+measurements+of+undoped+n-type+InP+materials+grown+from+various+stoichiometric+meltsen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/ICIPRM.1998.712396en_HK
dc.identifier.scopuseid_2-s2.0-0032296387en_HK
dc.identifier.hkuros40829-
dc.identifier.spage42en_HK
dc.identifier.epage44en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, XD=54781183100en_HK
dc.identifier.scopusauthoridSun, NF=7202556986en_HK
dc.identifier.scopusauthoridSun, TN=7402922751en_HK
dc.identifier.scopusauthoridLiu, SL=37102452500en_HK
dc.identifier.scopusauthoridYang, GY=8693019600en_HK
dc.identifier.scopusauthoridZhao, YW=54782080400en_HK
dc.identifier.scopusauthoridXu, XL=54782033700en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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