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Conference Paper: Electrically induced metastability in SI-GaAs studied by positron lifetime spectroscopy

TitleElectrically induced metastability in SI-GaAs studied by positron lifetime spectroscopy
Authors
KeywordsBreakdown
Metastability
Positron lifetime spectroscopy
SI-GaAs
Issue Date2001
PublisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.net
Citation
Materials Science Forum, 2001, v. 363-365, p. 108-110 How to Cite?
AbstractRecently, a room temperature electrically induced metastability in semi-insulating (SI)-GaAs has been reported in which the normally high resistance state of SI-GaAs converts into a low resistance state when breakdown electric fields are applied to the metal/SI-GaAs/metal system. The low resistance state persists when the electric field is lowered below the breakdown bias and as such may thus be considered as metastable state of the material. To clarify whether the high field breakdown has its origins in some atomic configurational change induced through high energy electron collisions we have employed positron lifetime spectroscopy. Lifetime spectra that have been taken at the same bias in both the high current and low current phases show that the positron lifetime in the metastable state has no change within the experimental error from that of the normal state, thus suggesting that the metastability is most likely of purely electronic origin.
Persistent Identifierhttp://hdl.handle.net/10722/80852
ISSN
2005 Impact Factor: 0.399
References

 

DC FieldValueLanguage
dc.contributor.authorLuo, YLen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorLui, MKen_HK
dc.contributor.authorMui, WKen_HK
dc.date.accessioned2010-09-06T08:10:59Z-
dc.date.available2010-09-06T08:10:59Z-
dc.date.issued2001en_HK
dc.identifier.citationMaterials Science Forum, 2001, v. 363-365, p. 108-110en_HK
dc.identifier.issn0255-5476en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80852-
dc.description.abstractRecently, a room temperature electrically induced metastability in semi-insulating (SI)-GaAs has been reported in which the normally high resistance state of SI-GaAs converts into a low resistance state when breakdown electric fields are applied to the metal/SI-GaAs/metal system. The low resistance state persists when the electric field is lowered below the breakdown bias and as such may thus be considered as metastable state of the material. To clarify whether the high field breakdown has its origins in some atomic configurational change induced through high energy electron collisions we have employed positron lifetime spectroscopy. Lifetime spectra that have been taken at the same bias in both the high current and low current phases show that the positron lifetime in the metastable state has no change within the experimental error from that of the normal state, thus suggesting that the metastability is most likely of purely electronic origin.en_HK
dc.languageengen_HK
dc.publisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.neten_HK
dc.relation.ispartofMaterials Science Forumen_HK
dc.rightsMaterials Science Forum. Copyright © Trans Tech Publications Ltd.en_HK
dc.subjectBreakdownen_HK
dc.subjectMetastabilityen_HK
dc.subjectPositron lifetime spectroscopyen_HK
dc.subjectSI-GaAsen_HK
dc.titleElectrically induced metastability in SI-GaAs studied by positron lifetime spectroscopyen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0255-5476&volume=363-365&spage=108&epage=110&date=2001&atitle=Electrically+Induced+Metastability+in+Si-GaAs+Studied+by+Positron+Lifetime+Spectroscopyen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0035019126en_HK
dc.identifier.hkuros56848en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0035019126&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume363-365en_HK
dc.identifier.spage108en_HK
dc.identifier.epage110en_HK
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridLuo, YL=55187936600en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridLui, MK=7004991693en_HK
dc.identifier.scopusauthoridMui, WK=6603105928en_HK

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