Browsing by Author rp00197

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Showing results 96 to 109 of 109 < previous 
TitleAuthor(s)Issue Date
 
Sensing characteristics of a novel NH 3-nitrided schottky-diode hydrogen sensor
Proceeding/Conference:IEEE International Symposium on Industrial Electronics
Tang, WMLai, PTXu, JPChan, CL
2004
 
Steam-induced interface improvement of N2O-nitrided SiO2 grown on 6H-SiC
Journal:Solid-State Electronics
Xu, JPLai, PTChan, CL
2003
 
A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric
Li, CWang, CLeung, CHLai, PTXu, JP
2009
 
A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric
Journal:Microelectronic Engineering
Li, CXWang, CDLeung, CHLai, PTXu, JP
2009
 
A study on interface and charge trapping properties of nitrided n-channel metal-oxide-semiconductor field-effect transistors by backsurface argon bombardment
Journal:Journal of Applied Physics
Lai, PTXu, JPLo, HBGheng, YC
1997
 
A study on the improved programming characteristics of flash memory with Si 3N 4/SiO 2 stacked tunneling dielectric
Journal:Microelectronics Reliability
Liu, LXu, JPChen, LLLai, PT
2009
 
Suppressed growth of unstable low-fr GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor
Journal:Applied Physics Letters
Zou, XXu, JPLi, CXLai, PT
2007
 
Suppression of hot-carrier-induced degradation in n-MOSFETS at low temperatures by N 2O-nitridation of gate oxide
Journal:Solid-State Electronics
Lai, PTXu, JPHuang, LLo, HBCheng, YC
1998
 
Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment
Journal:Microelectronics Reliability
Huang, MQLai, PTXu, JPZeng, SHLi, GQCheng, YC
1998
 
Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment
Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting
Huang, MQLai, PTXu, JPZeng, SHLi, GQCheng, YC
1997
 
Temperature-controlled system of PCR chips
Journal:Huazhong Ligong Daxue Xuebao/Journal Huazhong (Central China) University of Science and Technology
Xu, JLai, PTGan, XZhong, D
2001
 
A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer
Journal:Microelectronics Reliability
Zou, XXu, JPLi, CXLai, PTChen, WB
2007
 
Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal-oxide–nitride-oxide-silicon memory
Journal:Thin Solid Films
Liu, LXu, JChen, JXJi, FHUANG, XLai, PT
2012
 
Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness
Journal:Thin Solid Films
Xu, JPZou, XLai, PTLi, CXChan, CL
2009
Showing results 96 to 109 of 109 < previous