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Article: Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

TitleUse of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness
Authors
KeywordsAnneal
Capacitors
Ge metal-oxide-semiconductor
HfTiO
High-κ gate dielectrics
Interlayer
Transmission electron microscopy
Issue Date2009
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
Thin Solid Films, 2009, v. 517 n. 9, p. 2892-2895 How to Cite?
AbstractAnnealing of high-permittivity HfTiO gate dielectric on Ge substrate in different gases (N 2, NH 3, NO and N 2O) with or without water vapor is investigated. Analysis by transmission electron microscopy indicates that the four wet anneals can greatly suppress the growth of a GeO x interlayer at the dielectric/Ge interface, and thus decrease interface states, oxide charges and gate leakage current. Moreover, compared with the wet N 2 anneal, the wet NH 3, NO and N 2O anneals decrease the equivalent permittivity of the gate dielectric due to the growth of a GeO xN y interlayer. Among the eight anneals, the wet N 2 anneal produces the best dielectric performance with an equivalent relative permittivity of 35, capacitance equivalent thickness of 0.81 nm, interface-state density of 6.4 × 10 11 eV - 1 cm - 2 and gate leakage current of 2.7 × 10 - 4 A/cm 2 at V g = 1 V. © 2008 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155508
ISSN
2015 Impact Factor: 1.761
2015 SCImago Journal Rankings: 0.726
ISI Accession Number ID
Funding AgencyGrant Number
National Natural Science Foundation of China60776016
RGC of HKSAR, ChinaHKU 713308E
HKU200707176147
Funding Information:

The work is financially supported by the National Natural Science Foundation of China (Grant no. 60776016), the RGC of HKSAR, China (Project no. HKU 713308E), and the HKU Small Project Funding (200707176147).

References
Grants

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorZou, Xen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLi, CXen_HK
dc.contributor.authorChan, CLen_HK
dc.date.accessioned2012-08-08T08:33:51Z-
dc.date.available2012-08-08T08:33:51Z-
dc.date.issued2009en_HK
dc.identifier.citationThin Solid Films, 2009, v. 517 n. 9, p. 2892-2895en_HK
dc.identifier.issn0040-6090en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155508-
dc.description.abstractAnnealing of high-permittivity HfTiO gate dielectric on Ge substrate in different gases (N 2, NH 3, NO and N 2O) with or without water vapor is investigated. Analysis by transmission electron microscopy indicates that the four wet anneals can greatly suppress the growth of a GeO x interlayer at the dielectric/Ge interface, and thus decrease interface states, oxide charges and gate leakage current. Moreover, compared with the wet N 2 anneal, the wet NH 3, NO and N 2O anneals decrease the equivalent permittivity of the gate dielectric due to the growth of a GeO xN y interlayer. Among the eight anneals, the wet N 2 anneal produces the best dielectric performance with an equivalent relative permittivity of 35, capacitance equivalent thickness of 0.81 nm, interface-state density of 6.4 × 10 11 eV - 1 cm - 2 and gate leakage current of 2.7 × 10 - 4 A/cm 2 at V g = 1 V. © 2008 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_US
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsfen_HK
dc.relation.ispartofThin Solid Filmsen_HK
dc.subjectAnnealen_HK
dc.subjectCapacitorsen_HK
dc.subjectGe metal-oxide-semiconductoren_HK
dc.subjectHfTiOen_HK
dc.subjectHigh-κ gate dielectricsen_HK
dc.subjectInterlayeren_HK
dc.subjectTransmission electron microscopyen_HK
dc.titleUse of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thicknessen_HK
dc.typeArticleen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.tsf.2008.10.115en_HK
dc.identifier.scopuseid_2-s2.0-60249093732en_HK
dc.identifier.hkuros164248-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-60249093732&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume517en_HK
dc.identifier.issue9en_HK
dc.identifier.spage2892en_HK
dc.identifier.epage2895en_HK
dc.identifier.isiWOS:000264331500012-
dc.publisher.placeSwitzerlanden_HK
dc.relation.projectHigh-k Gate Dielectrics for High-Performance Germanium MISFET's-
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridZou, X=23020170400en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridChan, CL=8507083700en_HK

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