Skip navigation
HKU Login
Guest Login
Home
Publications
Researchers
Staff
Research Postgraduates
Organizations
Grants
Datasets
Deposit Data
HKUL Research Data Management
Theses
Patents
Community Service
Browsing by Author rp00197
Jump to:
0-9
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
中
or enter first few letters:
Showing results 96 to 109 of 109
< previous
Title
Author(s)
Issue Date
Sensing characteristics of a novel NH 3-nitrided schottky-diode hydrogen sensor
Proceeding/Conference:
IEEE International Symposium on Industrial Electronics
Tang, WM
Lai, PT
Xu, JP
Chan, CL
2004
Steam-induced interface improvement of N2O-nitrided SiO2 grown on 6H-SiC
Journal:
Solid-State Electronics
Xu, JP
Lai, PT
Chan, CL
2003
A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric
Li, C
Wang, C
Leung, CH
Lai, PT
Xu, JP
2009
A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric
Journal:
Microelectronic Engineering
Li, CX
Wang, CD
Leung, CH
Lai, PT
Xu, JP
2009
A study on interface and charge trapping properties of nitrided n-channel metal-oxide-semiconductor field-effect transistors by backsurface argon bombardment
Journal:
Journal of Applied Physics
Lai, PT
Xu, JP
Lo, HB
Gheng, YC
1997
A study on the improved programming characteristics of flash memory with Si 3N 4/SiO 2 stacked tunneling dielectric
Journal:
Microelectronics Reliability
Liu, L
Xu, JP
Chen, LL
Lai, PT
2009
Suppressed growth of unstable low-fr GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor
Journal:
Applied Physics Letters
Zou, X
Xu, JP
Li, CX
Lai, PT
2007
Suppression of hot-carrier-induced degradation in n-MOSFETS at low temperatures by N 2O-nitridation of gate oxide
Journal:
Solid-State Electronics
Lai, PT
Xu, JP
Huang, L
Lo, HB
Cheng, YC
1998
Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment
Journal:
Microelectronics Reliability
Huang, MQ
Lai, PT
Xu, JP
Zeng, SH
Li, GQ
Cheng, YC
1998
Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment
Proceeding/Conference:
Proceedings of the IEEE Hong Kong Electron Devices Meeting
Huang, MQ
Lai, PT
Xu, JP
Zeng, SH
Li, GQ
Cheng, YC
1997
Temperature-controlled system of PCR chips
Journal:
Huazhong Ligong Daxue Xuebao/Journal Huazhong (Central China) University of Science and Technology
Xu, J
Lai, PT
Gan, X
Zhong, D
2001
A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer
Journal:
Microelectronics Reliability
Zou, X
Xu, JP
Li, CX
Lai, PT
Chen, WB
2007
Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal-oxide–nitride-oxide-silicon memory
Journal:
Thin Solid Films
Liu, L
Xu, J
Chen, JX
Ji, F
HUANG, X
Lai, PT
2012
Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness
Journal:
Thin Solid Films
Xu, JP
Zou, X
Lai, PT
Li, CX
Chan, CL
2009