Browsing by Author rp00197

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 中
Showing results 8 to 27 of 109 < previous   next >
TitleAuthor(s)Issue Date
 
A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode
Journal:Microelectronics Reliability
Xu, JPXiao, XLai, PT
2010
 
A compact threshold-voltage model of MOSFETs with stack high-k gate dielectric
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Ji, FXu, JPChen, JJXu, HXLi, CXLai, PT
2009
 
Comparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayer
Journal:Applied Physics A: Materials Science and Processing
Xu, JPZhang, XFLi, CXChan, CLLai, PT
2010
 
A comparison between NO-annealed O2- and N2O-grown gate dielectrics
Proceeding/Conference:IEEE Hong Kong Electron Devices Meeting Proceedings
Lai, PTXu, JPCheng, YC
1998
 
Comparison between TaON/SiO2 and HfON/SiO2 as dual tunnel layer in charge-trapping flash memory applications
Proceeding/Conference:I E E E Conference on Electron Devices and Solid-State Circuits Proceedings
Chen, JXu, JLiu, LXu, HXLai, PT
2012
 
A comparison between the interface properties of N2O-nitrided and N2O-grown oxides
Journal:Solid-State Electronics
Xu, JPLai, PTCheng, YC
1998
 
Determination of optimal insulator thickness for MISiC hydrogen sensors
Proceeding/Conference:Solid-State Electronics
Xu, JPLai, PTHan, BTang, WM
2004
 
Dynamic-stress-induced enhanced degradation of 1/f noise in n-MOSFET's
Journal:IEEE Transactions on Electron Devices
Xu, JPLai, PTCheng, YC
2000
 
Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack
Journal:Chinese Physics
Zhang, XFXu, JPLai, PTLi, CXGuan, JG
2007
 
Effect of SiO2/SiC interface on inversion channel electron mobility of 4H-SiC n-MOSFET
Journal:Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Xu, JWu, HLai, PTHan, B
2004
 
Effects of annealing gas species on the electrical properties and reliability of Ge MOS capacitors with high-k Y 2O 3 gate dielectric
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Li, CXXu, HXXu, JPLai, PT
2009
 
The effects of duty cycle and voltage swing of gate pulse on the AC-stress-induced degradation of nMOSFETs with N2O gate oxides
Journal:Microelectronics Reliability
Zeng, XLai, PTXu, JP
1998
 
Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric
Journal:Solid-State Electronics
Li, CXLeung, CHLai, PTXu, JP
2010
 
Effects of Gate-Pulse Shape on the Accuracy of Charge-Pumping Measurement
Proceeding/Conference:International Conference on VLSI and CAD Proceedings
Lai, PTXu, JPPoek, CKCheng, YC
1997
 
Effects of post deposited Annealing on Ge MOS capacitors with sub-nanometer EOT HfTiO gate dielectric
Proceeding/Conference:IEEE International Conference of Nano/Micro Engineered and Molecular Systems (NEMS) Proceedings
Zou, XXu, JLai, PTLi, C
2008
 
Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric
Journal:Microelectronics Reliability
Li, CXZou, XLai, PTXu, JPChan, CL
2008
 
Effects of wet N 2O oxidation on interface properties of 6H-SiC MOS capacitors
Journal:IEEE Electron Device Letters
Lai, PTXu, JPChan, CL
2002
 
Electrical Characteristics of Ge MOS Capacitor with HfTiON as Gate Dielectric
Proceeding/Conference:Proceedings of RIUPEEEC
Zou, XLi, CXu, JPLai, PTChen, WB
2006
 
Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer
Journal:Chinese Physics
Chen, WBXu, JPLai, PTLi, YPXu, SGChan, CL
2006
 
Electrical properties and reliability of HfO 2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment
Journal:Chinese Physics
Xu, JPChen, WBLai, PTLi, YPChan, CL
2007
Showing results 8 to 27 of 109 < previous   next >