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Browsing by Author rp00197
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Showing results 21 to 40 of 109
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Title
Author(s)
Issue Date
Effects of Gate-Pulse Shape on the Accuracy of Charge-Pumping Measurement
Proceeding/Conference:
International Conference on VLSI and CAD Proceedings
Lai, PT
Xu, JP
Poek, CK
Cheng, YC
1997
Effects of post deposited Annealing on Ge MOS capacitors with sub-nanometer EOT HfTiO gate dielectric
Proceeding/Conference:
IEEE International Conference of Nano/Micro Engineered and Molecular Systems (NEMS) Proceedings
Zou, X
Xu, J
Lai, PT
Li, C
2008
Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric
Journal:
Microelectronics Reliability
Li, CX
Zou, X
Lai, PT
Xu, JP
Chan, CL
2008
Effects of wet N 2O oxidation on interface properties of 6H-SiC MOS capacitors
Journal:
IEEE Electron Device Letters
Lai, PT
Xu, JP
Chan, CL
2002
Electrical Characteristics of Ge MOS Capacitor with HfTiON as Gate Dielectric
Proceeding/Conference:
Proceedings of RIUPEEEC
Zou, X
Li, C
Xu, JP
Lai, PT
Chen, WB
2006
Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer
Journal:
Chinese Physics
Chen, WB
Xu, JP
Lai, PT
Li, YP
Xu, SG
Chan, CL
2006
Electrical properties and reliability of HfO 2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment
Journal:
Chinese Physics
Xu, JP
Chen, WB
Lai, PT
Li, YP
Chan, CL
2007
Electrical properties of Ge metal-oxide-semiconductor capacitors with La 2O 3 gate dielectric annealed in different ambient
Journal:
Thin Solid Films
Xu, HX
Xu, JP
Li, CX
Lai, PT
2010
Electrical properties of HfTiON gate-dielectric GaAs metal-oxide-semiconductor capacitor with A1ON as interlayer
Journal:
IEEE Trans. Electron Devices
Wang, L
Liu, L
Xu, J
Zhu, S.Y.
Huang, Y.
Lai, PT
2014
Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations
Journal:
Applied Physics Letters
Ji, F
Xu, JP
Lai, PT
Li, CX
Guan, JG
2007
Energy levels of interface states generated in n-MOSFETs by hot-carrier stresses
Journal:
Solid-State Electronics
Xu, JP
Lai, PT
Cheng, YC
2000
Enhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayer
Proceeding/Conference:
IEEE Conference on Electron Devices and Solid-State Circuits Proceedings
Li, CX
Zhang, XF
Xu, JP
Lai, PT
2008
Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation
Journal:
Microelectronics Reliability
Or, DCT
Lai, PT
Sin, JKO
Kwok, PCK
Xu, JP
2003
Enhancement of 1/f noise degradation in n-MOSFETs under AC hot-carrier stress
Proceeding/Conference:
Proceedings of 15th International Conference Noise in Physical Systems and 1/f Fluctuations
Lai, PT
Xu, J
Cheng, YC
1999
Fabrication and electrical characterization of MONOS memory with novel high-κ gate stack
Proceeding/Conference:
2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Liu, L
Xu, JP
Chan, CL
Lai, PT
2009
Gate dielectrics prepared by double nitridation in NO and N2O
Journal:
Applied Physics A: Materials Science and Processing
Xu, JP
Lai, PT
Cheng, YC
2000
Gate Leakage Model of Ge MOS Capacitor with High-k Gate Dielectric
Proceeding/Conference:
Proceedings of 8th ICSICT
Zou, X
Xu, JP
Lai, PT
Li, C
Zhang, XF
2006
Gate leakage properties of MOS devices with tri-layer high-k gate dielectric
Journal:
Microelectronics Reliability
Chen, WB
Xu, JP
Lai, PT
Li, YP
Xu, SG
2007
Gate-leakage model of Ge MOS capacitor with high-k gate dielectric
Proceeding/Conference:
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Zou, X
Xu, JP
Lai, PT
Li, CX
Zhang, XF
2007
Greatly suppressed stress-induced shift of gate-induced drain leakage in N20-based n-MOSFET's
Journal:
Solid-State Electronics
Xu, J
Lai, PT
Huang, L
Lo, SHB
Cheng, YC
1999