Browsing by Author rp00197

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TitleAuthor(s)Issue Date
 
Effects of Gate-Pulse Shape on the Accuracy of Charge-Pumping Measurement
Proceeding/Conference:International Conference on VLSI and CAD Proceedings
Lai, PTXu, JPPoek, CKCheng, YC
1997
 
Effects of post deposited Annealing on Ge MOS capacitors with sub-nanometer EOT HfTiO gate dielectric
Proceeding/Conference:IEEE International Conference of Nano/Micro Engineered and Molecular Systems (NEMS) Proceedings
Zou, XXu, JLai, PTLi, C
2008
 
Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric
Journal:Microelectronics Reliability
Li, CXZou, XLai, PTXu, JPChan, CL
2008
 
Effects of wet N 2O oxidation on interface properties of 6H-SiC MOS capacitors
Journal:IEEE Electron Device Letters
Lai, PTXu, JPChan, CL
2002
 
Electrical Characteristics of Ge MOS Capacitor with HfTiON as Gate Dielectric
Proceeding/Conference:Proceedings of RIUPEEEC
Zou, XLi, CXu, JPLai, PTChen, WB
2006
 
Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer
Journal:Chinese Physics
Chen, WBXu, JPLai, PTLi, YPXu, SGChan, CL
2006
 
Electrical properties and reliability of HfO 2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment
Journal:Chinese Physics
Xu, JPChen, WBLai, PTLi, YPChan, CL
2007
 
Electrical properties of Ge metal-oxide-semiconductor capacitors with La 2O 3 gate dielectric annealed in different ambient
Journal:Thin Solid Films
Xu, HXXu, JPLi, CXLai, PT
2010
 
Electrical properties of HfTiON gate-dielectric GaAs metal-oxide-semiconductor capacitor with A1ON as interlayer
Journal:IEEE Trans. Electron Devices
Wang, LLiu, LXu, JZhu, S.Y.Huang, Y.Lai, PT
2014
 
Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations
Journal:Applied Physics Letters
Ji, FXu, JPLai, PTLi, CXGuan, JG
2007
 
Energy levels of interface states generated in n-MOSFETs by hot-carrier stresses
Journal:Solid-State Electronics
Xu, JPLai, PTCheng, YC
2000
 
Enhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayer
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings
Li, CXZhang, XFXu, JPLai, PT
2008
 
Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation
Journal:Microelectronics Reliability
Or, DCTLai, PTSin, JKOKwok, PCKXu, JP
2003
 
Enhancement of 1/f noise degradation in n-MOSFETs under AC hot-carrier stress
Proceeding/Conference:Proceedings of 15th International Conference Noise in Physical Systems and 1/f Fluctuations
Lai, PTXu, JCheng, YC
1999
 
Fabrication and electrical characterization of MONOS memory with novel high-κ gate stack
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Liu, LXu, JPChan, CLLai, PT
2009
 
Gate dielectrics prepared by double nitridation in NO and N2O
Journal:Applied Physics A: Materials Science and Processing
Xu, JPLai, PTCheng, YC
2000
 
Gate Leakage Model of Ge MOS Capacitor with High-k Gate Dielectric
Proceeding/Conference:Proceedings of 8th ICSICT
Zou, XXu, JPLai, PTLi, CZhang, XF
2006
 
Gate leakage properties of MOS devices with tri-layer high-k gate dielectric
Journal:Microelectronics Reliability
Chen, WBXu, JPLai, PTLi, YPXu, SG
2007
 
Gate-leakage model of Ge MOS capacitor with high-k gate dielectric
Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Zou, XXu, JPLai, PTLi, CXZhang, XF
2007
 
Greatly suppressed stress-induced shift of gate-induced drain leakage in N20-based n-MOSFET's
Journal:Solid-State Electronics
Xu, JLai, PTHuang, LLo, SHBCheng, YC
1999
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