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Title	Author(s)	Issue Date
4-11 Electrical characterization of defects at the gallium nitride based homo- and hetero-junctions Proceeding/Conference:第十五屆全國半導體物理年會: 論文摘要集	Chen, X Huang, Y Ling, FCC Fung, SHY Beling, CD	2005
Aluminum and electron-irradiation induced deep-levels in n-type and p-type 6H-SiC Proceeding/Conference:Defect and impurity engineered semiconductors II, Materials Research Society Symposium Proceedings	Gong, M Beling, CD Fung, SHY Brauer, G Wirth, H Skorupa, W You, ZP	1998
Aluminum-implantation-induced deep levels in n-type 6H–SiC Journal:Journal of Applied Physics	Fung, SHY Gong, M Beling, CD Brauer, G Wirth, H Skorupa, W	1998
An evaluation of algorithms for the deconvolution of Doppler broadening positron annihilation radiation spectroscopy spectra Journal:Computer Physics Communications	Woo, Teresa K.C.Cheng, Vincent K.W.Beling, Christopher D.Ng, Michael K.P.	2005
An analytical approach for studying diffusion and drift effects of positrons at the metal/semi-insulating GaAs interface Journal:Materials Science Forum	Hu, YF Fung, S Beling, CD	1997
Annealing studies of Au/GaAs and Al/GaAs interfaces using a variable energy positron beam Journal:Applied Surface Science	Ling, CC Lee, TC Fung, S Beling, CD Weng, H Xu, J Sun, S Han, R	1995
Annualing study of Au/GaAs(110) interface using low energy positron beam Proceeding/Conference:Proceedings of the 4th International Conference on the Structure of Surfaces	Weng, H Xu, J Sun, S Han, R Ling, CC Shan, YY Lee, TC Fung, S Beling, CD	1994
Anomalous behaviors of E1 E2 deep level defects in 6H silicon carbide Journal:Applied Physics Letters	Chen, XD Ling, CC Gong, M Fung, S Beling, CD Brauer, G Anwand, W Skorupa, W	2005
An apparatus used to make 22Na sources for use in low-energy positron beams Journal:Applied Surface Science	Weng, HM Hu, YF Beling, CD Fung, S	1997
Application of positron annihilation lifetime technique to the study of deep level transients in semiconductors Journal:Journal of Applied Physics	Deng, AH Shan, YY Fung, S Beling, CD	2002
Arsenic doped p -type zinc oxide films grown by radio frequency magnetron sputtering Journal:Journal of Applied Physics	Fan, JC Zhu, CY Fung, S Zhong, YC Wong, KS Xie, Z Brauer, G Anwand, W Skorupa, W To, CK Yang, B Beling, CD Ling, CC	2009
Au/GaAs interface annealing study by positron-lifetime spectroscopy Journal:Physical Review B (Condensed Matter)	Shan, YY Panda, BK Fung, S Beling, CD Wang, YY	1995
Au/n-ZnO rectifying contact fabricated with hydrogen peroxide pretreatment Journal:Journal of Applied Physics	Gu, QL Cheung, CK Ling, CC Ng, AMC Djurišić, AB Lu, LW Chen, XD Fung, S Beling, CD Ong, HC	2008
Beam optics studies for the planned hybrid electrostatic-magnetic guided slow positron beam in Hong Kong Journal:Applied Physics A Materials Science & Processing	LiMing, W Melwani, SB Beling, CD Fung, S	1995
Beryllium implantation induced deep level defects in p-type 6h-silicon carbide Journal:Journal of Applied Physics	Chen, XD Ling, CC Fung, S Beling, CD Gong, M Henkel, T Tanoue, H Kobayashi, N	2003
Beryllium implantation induced deep levels in 6H-silicon carbide Journal:Physica B: Condensed Matter	Chen, XD Fung, S Beling, CD Gong, M Henkel, T Tanoue, H Kobayashi, N	2001
Bi-directional phase transition of Cu/6H-SiC(0 0 0 1) system discovered by positron beam study Proceeding/Conference:Applied Surface Science	Zhang, JD Weng, HM Shan, YY Ching, HM Beling, CD Fung, S Ling, CC	2002
Calculation of electron-positron momentum distribution in Si within the generalized gradient approximation Proceeding/Conference:Proceedings of the Sixth Sinica Positron Annihilation Conference	Liming, W Panda, BK Beling, CD Fung, SHY	1996
Calculation of the momentum distributions of positron annihilation radiation in Ge Journal:Journal of Physics Condensed Matter	LiMing, W Panda, BK Fung, S Beling, CD	1997
Carrier injection level dependence of post-breakdown metastability in semi-insulating GaAs Journal:Solid State Communications	Luo, YL Zhao, YW Fung, S Beling, CD	2003

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