Au/n-ZnO rectifying contact fabricated with hydrogen peroxide pretreatment

Abstract

Au contacts were deposited on n -type ZnO single crystals with and without hydrogen peroxide pretreatment for the ZnO substrate. The Au/ZnO contacts fabricated on substrates without H2 O2 pretreatment were Ohmic and those with H2 O2 pretreatment were rectifying. With an aim of fabricating a good quality Schottky contact, the rectifying property of the Au/ZnO contact was systemically investigated by varying the treatment temperature and duration. The best performing Schottky contact was found to have an ideality factor of 1.15 and a leakage current of ∼ 10-7 A cm-2. A multispectroscopic study, including scanning electron microscopy, positron annihilation spectroscopy, deep level transient spectroscopy, x-ray photoelectron spectroscopy, and photoluminescence, showed that the H2 O2 treatment removed the OH impurity and created Zn-vacancy related defects hence decreasing the conductivity of the ZnO surface layer, a condition favorable for forming good Schottky contact. However, the H2 O2 treatment also resulted in a deterioration of the surface morphology, leading to an increase in the Schottky contact ideality factor and leakage current in the case of nonoptimal treatment time and temperature. © 2008 American Institute of Physics.