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Article: Au/n-ZnO rectifying contact fabricated with hydrogen peroxide pretreatment

TitleAu/n-ZnO rectifying contact fabricated with hydrogen peroxide pretreatment
Authors
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2008, v. 103 n. 9, article no. 093706 How to Cite?
AbstractAu contacts were deposited on n -type ZnO single crystals with and without hydrogen peroxide pretreatment for the ZnO substrate. The Au/ZnO contacts fabricated on substrates without H2 O2 pretreatment were Ohmic and those with H2 O2 pretreatment were rectifying. With an aim of fabricating a good quality Schottky contact, the rectifying property of the Au/ZnO contact was systemically investigated by varying the treatment temperature and duration. The best performing Schottky contact was found to have an ideality factor of 1.15 and a leakage current of ∼ 10-7 A cm-2. A multispectroscopic study, including scanning electron microscopy, positron annihilation spectroscopy, deep level transient spectroscopy, x-ray photoelectron spectroscopy, and photoluminescence, showed that the H2 O2 treatment removed the OH impurity and created Zn-vacancy related defects hence decreasing the conductivity of the ZnO surface layer, a condition favorable for forming good Schottky contact. However, the H2 O2 treatment also resulted in a deterioration of the surface morphology, leading to an increase in the Schottky contact ideality factor and leakage current in the case of nonoptimal treatment time and temperature. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/80793
ISSN
2017 Impact Factor: 2.176
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorGu, QLen_HK
dc.contributor.authorCheung, CKen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorNg, AMCen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorLu, LWen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorOng, HCen_HK
dc.date.accessioned2010-09-06T08:10:20Z-
dc.date.available2010-09-06T08:10:20Z-
dc.date.issued2008en_HK
dc.identifier.citationJournal of Applied Physics, 2008, v. 103 n. 9, article no. 093706-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80793-
dc.description.abstractAu contacts were deposited on n -type ZnO single crystals with and without hydrogen peroxide pretreatment for the ZnO substrate. The Au/ZnO contacts fabricated on substrates without H2 O2 pretreatment were Ohmic and those with H2 O2 pretreatment were rectifying. With an aim of fabricating a good quality Schottky contact, the rectifying property of the Au/ZnO contact was systemically investigated by varying the treatment temperature and duration. The best performing Schottky contact was found to have an ideality factor of 1.15 and a leakage current of ∼ 10-7 A cm-2. A multispectroscopic study, including scanning electron microscopy, positron annihilation spectroscopy, deep level transient spectroscopy, x-ray photoelectron spectroscopy, and photoluminescence, showed that the H2 O2 treatment removed the OH impurity and created Zn-vacancy related defects hence decreasing the conductivity of the ZnO surface layer, a condition favorable for forming good Schottky contact. However, the H2 O2 treatment also resulted in a deterioration of the surface morphology, leading to an increase in the Schottky contact ideality factor and leakage current in the case of nonoptimal treatment time and temperature. © 2008 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2008, v. 103 n. 9, article no. 093706 and may be found at https://doi.org/10.1063/1.2912827-
dc.titleAu/n-ZnO rectifying contact fabricated with hydrogen peroxide pretreatmenten_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=103&spage=093706: 1&epage=8&date=2008&atitle=Au/n-ZnO+rectifying+contact+fabricated+with+hydrogen+peroxide+pretreatmenten_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailLu, LW: liweilu@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityLu, LW=rp00477en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.2912827en_HK
dc.identifier.scopuseid_2-s2.0-43949095841en_HK
dc.identifier.hkuros141729en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-43949095841&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume103en_HK
dc.identifier.issue9en_HK
dc.identifier.spagearticle no. 093706-
dc.identifier.epagearticle no. 093706-
dc.identifier.isiWOS:000255983200075-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridGu, QL=16067090400en_HK
dc.identifier.scopusauthoridCheung, CK=10044144900en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridNg, AMC=12140078600en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridLu, LW=7403963552en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridOng, HC=7102298056en_HK

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