Conference Paper: 4-11 Electrical characterization of defects at the gallium nitride based homo- and hetero-junctions

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Title4-11 Electrical characterization of defects at the gallium nitride based homo- and hetero-junctions
AuthorsChen, X
Huang, Y
Ling, FCC
Fung, SHY
Beling, CD
Issue Date2005
PublisherSichuan University.
DC Field
Value
dc.contributor.authorChen, X
dc.contributor.authorHuang, Y
dc.contributor.authorLing, FCC
dc.contributor.authorFung, SHY
dc.contributor.authorBeling, CD
dc.date.accessioned2010-09-26T01:38:12Z
dc.date.available2010-09-26T01:38:12Z
dc.date.issued2005
dc.identifier.hkuros114270
dc.identifier.spage41
dc.identifier.urihttp://hdl.handle.net/10722/109809
dc.languageeng
dc.publisherSichuan University.
dc.relation.ispartof第十五屆全國半導體物理年會: 論文摘要集
dc.title4-11 Electrical characterization of defects at the gallium nitride based homo- and hetero-junctions
dc.typeConference_Paper