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Conference Paper: 4-11 Electrical characterization of defects at the gallium nitride based homo- and hetero-junctions

Title4-11 Electrical characterization of defects at the gallium nitride based homo- and hetero-junctions
Authors
Issue Date2005
PublisherSichuan University.
Persistent Identifierhttp://hdl.handle.net/10722/109809

 

DC FieldValueLanguage
dc.contributor.authorChen, Xen_HK
dc.contributor.authorHuang, Yen_HK
dc.contributor.authorLing, FCCen_HK
dc.contributor.authorFung, SHYen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2010-09-26T01:38:12Z-
dc.date.available2010-09-26T01:38:12Z-
dc.date.issued2005en_HK
dc.identifier.urihttp://hdl.handle.net/10722/109809-
dc.languageengen_HK
dc.publisherSichuan University.en_HK
dc.relation.ispartof第十五屆全國半導體物理年會: 論文摘要集zh_HK
dc.title4-11 Electrical characterization of defects at the gallium nitride based homo- and hetero-junctionsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, SHY: sfung@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityLing, FCC=rp00747en_HK
dc.identifier.authorityFung, SHY=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.hkuros114270en_HK
dc.identifier.spage41en_HK

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