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Conference Paper: 4-11 Electrical characterization of defects at the gallium nitride based homo- and hetero-junctions
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Title4-11 Electrical characterization of defects at the gallium nitride based homo- and hetero-junctions
 
AuthorsChen, X
Huang, Y
Ling, FCC
Fung, SHY
Beling, CD
 
Issue Date2005
 
PublisherSichuan University.
 
DC FieldValue
dc.contributor.authorChen, X
 
dc.contributor.authorHuang, Y
 
dc.contributor.authorLing, FCC
 
dc.contributor.authorFung, SHY
 
dc.contributor.authorBeling, CD
 
dc.date.accessioned2010-09-26T01:38:12Z
 
dc.date.available2010-09-26T01:38:12Z
 
dc.date.issued2005
 
dc.identifier.hkuros114270
 
dc.identifier.spage41
 
dc.identifier.urihttp://hdl.handle.net/10722/109809
 
dc.languageeng
 
dc.publisherSichuan University.
 
dc.relation.ispartof第十五屆全國半導體物理年會: 論文摘要集
 
dc.title4-11 Electrical characterization of defects at the gallium nitride based homo- and hetero-junctions
 
dc.typeConference_Paper
 
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<contributor.author>Beling, CD</contributor.author>
<date.accessioned>2010-09-26T01:38:12Z</date.accessioned>
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<title>4-11 Electrical characterization of defects at the gallium nitride based homo- and hetero-junctions</title>
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