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Article: Annealing studies of Au/GaAs and Al/GaAs interfaces using a variable energy positron beam

TitleAnnealing studies of Au/GaAs and Al/GaAs interfaces using a variable energy positron beam
Authors
Issue Date1995
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc
Citation
Applied Surface Science, 1995, v. 85 C, p. 305-310 How to Cite?
AbstractVarious thicknesses of Au and Al have been evaporated onto semi-insulating GaAs(110) to form Schottky contacts, which have been subject to different annealing conditions. A variable energy positron beam has been used to probe the metal-semiconductor interfaces by observing the Doppler broadening of the annihilation radiation. The data are well fitted by a three-layer model, namely the metal layer, the interface region and the GaAs bulk. The interfacial region is attributed to the intermixing of the atoms and the formation of new phases occurring at the interface. For the Au/GaAs samples, the interfacial width was observed to increase with increasing annealing temperature and this is attributed to the increase of elemental intermixing at the interface. From the trend of the Doppler broadening signal on annealed samples, we infer that the processes of increasing interfacial order (decreasing S) (such as grain enlargement and vacancy removal) are in competition with the process of decreasing interfacial order (increasing S) (such as vacancy creation through atomic interdiffusion). For Al/GaAs, the interfacial width remained effectively constant up to the annealing temperature of 400°C. From the Doppler broadening signal, the annealing on the interfacial order was found to be metal thickness dependent. This observation has tentatively been explained by the above two competition processes and the grain boundary diffusion of atoms at the Al/GaAs interface. © 1995.
Persistent Identifierhttp://hdl.handle.net/10722/81085
ISSN
2015 Impact Factor: 3.15
2015 SCImago Journal Rankings: 0.930
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLing, CCen_HK
dc.contributor.authorLee, TCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorWeng, Hen_HK
dc.contributor.authorXu, Jen_HK
dc.contributor.authorSun, Sen_HK
dc.contributor.authorHan, Ren_HK
dc.date.accessioned2010-09-06T08:13:35Z-
dc.date.available2010-09-06T08:13:35Z-
dc.date.issued1995en_HK
dc.identifier.citationApplied Surface Science, 1995, v. 85 C, p. 305-310en_HK
dc.identifier.issn0169-4332en_HK
dc.identifier.urihttp://hdl.handle.net/10722/81085-
dc.description.abstractVarious thicknesses of Au and Al have been evaporated onto semi-insulating GaAs(110) to form Schottky contacts, which have been subject to different annealing conditions. A variable energy positron beam has been used to probe the metal-semiconductor interfaces by observing the Doppler broadening of the annihilation radiation. The data are well fitted by a three-layer model, namely the metal layer, the interface region and the GaAs bulk. The interfacial region is attributed to the intermixing of the atoms and the formation of new phases occurring at the interface. For the Au/GaAs samples, the interfacial width was observed to increase with increasing annealing temperature and this is attributed to the increase of elemental intermixing at the interface. From the trend of the Doppler broadening signal on annealed samples, we infer that the processes of increasing interfacial order (decreasing S) (such as grain enlargement and vacancy removal) are in competition with the process of decreasing interfacial order (increasing S) (such as vacancy creation through atomic interdiffusion). For Al/GaAs, the interfacial width remained effectively constant up to the annealing temperature of 400°C. From the Doppler broadening signal, the annealing on the interfacial order was found to be metal thickness dependent. This observation has tentatively been explained by the above two competition processes and the grain boundary diffusion of atoms at the Al/GaAs interface. © 1995.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsuscen_HK
dc.relation.ispartofApplied Surface Scienceen_HK
dc.rightsApplied Surface Science. Copyright © Elsevier BV.en_HK
dc.titleAnnealing studies of Au/GaAs and Al/GaAs interfaces using a variable energy positron beamen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0169-4332&volume=85&spage=305&epage=310&date=1995&atitle=Annealing+studies+of+Au/GaAs+and+Al/GaAs+interfaces+using+a+variable+energy+positron+beamen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/0169-4332(94)00349-1-
dc.identifier.scopuseid_2-s2.0-0029632134en_HK
dc.identifier.hkuros3325en_HK
dc.identifier.volume85en_HK
dc.identifier.issueCen_HK
dc.identifier.spage305en_HK
dc.identifier.epage310en_HK
dc.identifier.isiWOS:A1995QD95000052-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridLee, TC=36347141200en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridWeng, H=7102468725en_HK
dc.identifier.scopusauthoridXu, J=7407004559en_HK
dc.identifier.scopusauthoridSun, S=36800480400en_HK
dc.identifier.scopusauthoridHan, R=7202457519en_HK

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