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Article: Beryllium implantation induced deep levels in 6H-silicon carbide

TitleBeryllium implantation induced deep levels in 6H-silicon carbide
Authors
Keywords6H-silicon carbide
Beryllium
Deep level defect
Implantation
Issue Date2001
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physb
Citation
Physica B: Condensed Matter, 2001, v. 308-310, p. 718-721 How to Cite?
AbstractBeryllium has been implanted into both n- and p-type 6H-silicon carbide (SiC) with high and low doses. Upon subsequent annealing at 1600°C, Beryllium implantation induced deep levels have been investigated by deep level transient spectroscopy. Five deep level centers labeled as BE1-BE5 were detected from high dose beryllium implantation produced pn junctions. A comparative study of low dose beryllium implanted n-type 6H-SiC sample proved that the BE1-BE3 centers were electron traps located at 0.34, 0.44, and 0.53eV, respectively below the conduction band edge. At the same time, the BE4 and BE5 centers were found to be hole traps situated at 0.64 and 0.73eV, respectively, above the valence band edge. In the case of beryllium implanted p-type 6H-SiC, four hole traps labeled as BEP1, BEP2, BEP3, and BEP4 have been observed. The observed levels of the hole traps BEP1 and BEP2 at 0.41 and 0.60eV, respectively, above the valence band agree well with those from the Hall effect data from material with beryllium acting as doubly charged acceptor. The other hole traps BEP3 and BEP4 at 0.76 and 0.88eV, above the valence band, respectively, are thought to be due to beryllium implantation induced defects or complexes. © 2001 Elsevier Science B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/80674
ISSN
2015 Impact Factor: 1.352
2015 SCImago Journal Rankings: 0.509
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChen, XDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorHenkel, Ten_HK
dc.contributor.authorTanoue, Hen_HK
dc.contributor.authorKobayashi, Nen_HK
dc.date.accessioned2010-09-06T08:09:03Z-
dc.date.available2010-09-06T08:09:03Z-
dc.date.issued2001en_HK
dc.identifier.citationPhysica B: Condensed Matter, 2001, v. 308-310, p. 718-721en_HK
dc.identifier.issn0921-4526en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80674-
dc.description.abstractBeryllium has been implanted into both n- and p-type 6H-silicon carbide (SiC) with high and low doses. Upon subsequent annealing at 1600°C, Beryllium implantation induced deep levels have been investigated by deep level transient spectroscopy. Five deep level centers labeled as BE1-BE5 were detected from high dose beryllium implantation produced pn junctions. A comparative study of low dose beryllium implanted n-type 6H-SiC sample proved that the BE1-BE3 centers were electron traps located at 0.34, 0.44, and 0.53eV, respectively below the conduction band edge. At the same time, the BE4 and BE5 centers were found to be hole traps situated at 0.64 and 0.73eV, respectively, above the valence band edge. In the case of beryllium implanted p-type 6H-SiC, four hole traps labeled as BEP1, BEP2, BEP3, and BEP4 have been observed. The observed levels of the hole traps BEP1 and BEP2 at 0.41 and 0.60eV, respectively, above the valence band agree well with those from the Hall effect data from material with beryllium acting as doubly charged acceptor. The other hole traps BEP3 and BEP4 at 0.76 and 0.88eV, above the valence band, respectively, are thought to be due to beryllium implantation induced defects or complexes. © 2001 Elsevier Science B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physben_HK
dc.relation.ispartofPhysica B: Condensed Matteren_HK
dc.rightsPhysica B: Condensed Matter. Copyright © Elsevier BV.en_HK
dc.subject6H-silicon carbideen_HK
dc.subjectBerylliumen_HK
dc.subjectDeep level defecten_HK
dc.subjectImplantationen_HK
dc.titleBeryllium implantation induced deep levels in 6H-silicon carbideen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0921-4526&volume=308-310&spage=718&epage=721&date=2001&atitle=Beryllium+implantation+induced+deep+levels+in+6H-silicon+carbideen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/S0921-4526(01)00880-8en_HK
dc.identifier.scopuseid_2-s2.0-0035675671en_HK
dc.identifier.hkuros65709en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0035675671&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume308-310en_HK
dc.identifier.spage718en_HK
dc.identifier.epage721en_HK
dc.identifier.isiWOS:000173660100180-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridHenkel, T=7007164479en_HK
dc.identifier.scopusauthoridTanoue, H=7006255463en_HK
dc.identifier.scopusauthoridKobayashi, N=7404311470en_HK

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