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Article: Au/GaAs interface annealing study by positron-lifetime spectroscopy

TitleAu/GaAs interface annealing study by positron-lifetime spectroscopy
Authors
KeywordsPhysics
Issue Date1995
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B, 1995, v. 52 n. 7, p. 4724-4727 How to Cite?
AbstractStructural changes of annealed Au contacts on semi-insulating GaAs have been observed by conventional positron lifetime-spectroscopy in which a significant fraction of positrons are drifted from a Na22 source to the contact by an electric field. For annealing temperatures below 200 °C it is found that the interface traps positrons into microvoids with a characteristic positron lifetime of 380±10 ps. For annealing in the range of 300-400 °C a 150±20 ps additional component appears in the lifetime spectra that is attributed to positrons annihilating from AuGa phases at the interface. The most likely explanation for this sudden onset of the positron component in the AuGa phases is that the changes in the GaAs near surface electron chemical potential, brought about by annealing, affect the interfacial dipole in such a way as to allow a favorable potential barrier for positron penetration into the metallic phase. © 1995 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/43434
ISSN
2001 Impact Factor: 3.07
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorShan, YYen_HK
dc.contributor.authorPanda, BKen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorWang, YYen_HK
dc.date.accessioned2007-03-23T04:45:37Z-
dc.date.available2007-03-23T04:45:37Z-
dc.date.issued1995en_HK
dc.identifier.citationPhysical Review B, 1995, v. 52 n. 7, p. 4724-4727en_HK
dc.identifier.issn0163-1829en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43434-
dc.description.abstractStructural changes of annealed Au contacts on semi-insulating GaAs have been observed by conventional positron lifetime-spectroscopy in which a significant fraction of positrons are drifted from a Na22 source to the contact by an electric field. For annealing temperatures below 200 °C it is found that the interface traps positrons into microvoids with a characteristic positron lifetime of 380±10 ps. For annealing in the range of 300-400 °C a 150±20 ps additional component appears in the lifetime spectra that is attributed to positrons annihilating from AuGa phases at the interface. The most likely explanation for this sudden onset of the positron component in the AuGa phases is that the changes in the GaAs near surface electron chemical potential, brought about by annealing, affect the interfacial dipole in such a way as to allow a favorable potential barrier for positron penetration into the metallic phase. © 1995 The American Physical Society.en_HK
dc.format.extent898976 bytes-
dc.format.extent28160 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review Ben_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsPhysical Review B (Condensed Matter). Copyright © American Physical Society.en_HK
dc.subjectPhysicsen_HK
dc.titleAu/GaAs interface annealing study by positron-lifetime spectroscopyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0163-1829&volume=52&issue=7&spage=4724&epage=4727&date=1995&atitle=Au/GaAs+interface+annealing+study+by+positron-lifetime+spectroscopyen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.52.4724en_HK
dc.identifier.scopuseid_2-s2.0-0642329274en_HK
dc.identifier.hkuros9266-
dc.identifier.volume52en_HK
dc.identifier.issue7en_HK
dc.identifier.spage4724en_HK
dc.identifier.epage4727en_HK
dc.identifier.isiWOS:A1995RR50200025-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridShan, YY=7203036700en_HK
dc.identifier.scopusauthoridPanda, BK=22963418500en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridWang, YY=7601511509en_HK

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