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Article: Carrier injection level dependence of post-breakdown metastability in semi-insulating GaAs

TitleCarrier injection level dependence of post-breakdown metastability in semi-insulating GaAs
Authors
KeywordsC. Crystal structure and symmetry
C. Point defects
D. Electronic transport
D. Phase transitions
Issue Date2003
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc
Citation
Solid State Communications, 2003, v. 127 n. 7, p. 499-503 How to Cite?
AbstractRecently, a room temperature electrically induced metastability in semi-insulating (SI)-GaAs has been reported in which the normally high resistance state of SI-GaAs converts into a low resistance state when breakdown electric fields are applied to the metal/SI-GaAs/metal system. The low resistance state continues to persist when the electric field is lowered below the breakdown bias and as such may be treated as metastable state of the material. This phenomenon is believed to be closely related to the 'lock-on' effect utilized in high power photoconductive semiconductor switches made from SI-GaAs. The present study seeks to understand the mechanism for this electrically induced metastability by studying the influence of the injection current on the metastable phase. The data favor an interpretation of the high current state of the SI-GaAs in terms of double carrier injection and the sustaining of an internal electron-hole plasma in the material. © 2003 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/80374
ISSN
2015 Impact Factor: 1.458
2015 SCImago Journal Rankings: 0.776
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLuo, YLen_HK
dc.contributor.authorZhao, YWen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2010-09-06T08:05:45Z-
dc.date.available2010-09-06T08:05:45Z-
dc.date.issued2003en_HK
dc.identifier.citationSolid State Communications, 2003, v. 127 n. 7, p. 499-503en_HK
dc.identifier.issn0038-1098en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80374-
dc.description.abstractRecently, a room temperature electrically induced metastability in semi-insulating (SI)-GaAs has been reported in which the normally high resistance state of SI-GaAs converts into a low resistance state when breakdown electric fields are applied to the metal/SI-GaAs/metal system. The low resistance state continues to persist when the electric field is lowered below the breakdown bias and as such may be treated as metastable state of the material. This phenomenon is believed to be closely related to the 'lock-on' effect utilized in high power photoconductive semiconductor switches made from SI-GaAs. The present study seeks to understand the mechanism for this electrically induced metastability by studying the influence of the injection current on the metastable phase. The data favor an interpretation of the high current state of the SI-GaAs in terms of double carrier injection and the sustaining of an internal electron-hole plasma in the material. © 2003 Elsevier Ltd. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sscen_HK
dc.relation.ispartofSolid State Communicationsen_HK
dc.subjectC. Crystal structure and symmetryen_HK
dc.subjectC. Point defectsen_HK
dc.subjectD. Electronic transporten_HK
dc.subjectD. Phase transitionsen_HK
dc.titleCarrier injection level dependence of post-breakdown metastability in semi-insulating GaAsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0038-1098&volume=127&spage=499&epage=503&date=2003&atitle=Carrier+injection+level+dependence+of+post-breakdown+metastability+in+semi-insulating+GaAsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/S0038-1098(03)00443-5en_HK
dc.identifier.scopuseid_2-s2.0-0042531572en_HK
dc.identifier.hkuros84992en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0042531572&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume127en_HK
dc.identifier.issue7en_HK
dc.identifier.spage499en_HK
dc.identifier.epage503en_HK
dc.identifier.isiWOS:000184990100007-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLuo, YL=7404333050en_HK
dc.identifier.scopusauthoridZhao, YW=7406633326en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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