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Article: Application of positron annihilation lifetime technique to the study of deep level transients in semiconductors

TitleApplication of positron annihilation lifetime technique to the study of deep level transients in semiconductors
Authors
KeywordsPhysics engineering
Issue Date2002
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2002, v. 91 n. 6, p. 3931-3933 How to Cite?
AbstractUnlike its conventional applications in lattice defect characterization, positron annihilation lifetime technique was applied to study temperature-dependent deep level transients in semiconductors. Defect levels in the band gap can be determined as they are determined by conventional deep level transient spectroscopy (DLTS) studies. The promising advantage of this application of positron annihilation over the conventional DLTS is that it could further extract extra microstructure information of deep-level defects, such as whether a deep level defect is vacancy related or not. A demonstration of EL2 defect level transient study in GaAs was shown and the EL2 level of 0.82±0.02 eV was obtained by a standard Arrhenius analysis, similar to that in conventional DLTS studies. © 2002 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42205
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorDeng, AHen_HK
dc.contributor.authorShan, YYen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2007-01-08T02:31:36Z-
dc.date.available2007-01-08T02:31:36Z-
dc.date.issued2002en_HK
dc.identifier.citationJournal Of Applied Physics, 2002, v. 91 n. 6, p. 3931-3933en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42205-
dc.description.abstractUnlike its conventional applications in lattice defect characterization, positron annihilation lifetime technique was applied to study temperature-dependent deep level transients in semiconductors. Defect levels in the band gap can be determined as they are determined by conventional deep level transient spectroscopy (DLTS) studies. The promising advantage of this application of positron annihilation over the conventional DLTS is that it could further extract extra microstructure information of deep-level defects, such as whether a deep level defect is vacancy related or not. A demonstration of EL2 defect level transient study in GaAs was shown and the EL2 level of 0.82±0.02 eV was obtained by a standard Arrhenius analysis, similar to that in conventional DLTS studies. © 2002 American Institute of Physics.en_HK
dc.format.extent68306 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleApplication of positron annihilation lifetime technique to the study of deep level transients in semiconductorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=91&issue=6&spage=3931&epage=3933&date=2002&atitle=Application+of+positron+annihilation+lifetime+technique+to+the+study+of+deep+level+transients+in+semiconductorsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1436551en_HK
dc.identifier.scopuseid_2-s2.0-0037087427en_HK
dc.identifier.hkuros65715-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037087427&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume91en_HK
dc.identifier.issue6en_HK
dc.identifier.spage3931en_HK
dc.identifier.epage3933en_HK
dc.identifier.isiWOS:000174182500068-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridDeng, AH=7006160354en_HK
dc.identifier.scopusauthoridShan, YY=7203036700en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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