File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: Bi-directional phase transition of Cu/6H-SiC(0 0 0 1) system discovered by positron beam study

TitleBi-directional phase transition of Cu/6H-SiC(0 0 0 1) system discovered by positron beam study
Authors
KeywordsCu/SiC
EDXS
Phase transition
VEPFIT
Issue Date2002
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc
Citation
9th International Workshop on Slow Positron Beam Techniques, Dresden, Germany, 16-22 September 2001. In Applied Surface Science, 2002, v. 194 n. 1-4, p. 278-282 How to Cite?
AbstractThe slow positron beam facility at the University of Hong Kong has been used to study the Cu/6H-SiC(0 0 0 1) system. The S-E data show the presence of the Cu/SiC interface buried at a depth of 30 nm. Keeping the beam energy fixed and sweeping the sample temperature, sharp discontinuities are noted in the S-parameter at both ∼17 and ∼250 K. The S-parameter transitions, which are in opposite directions, are indicative of sharp free volume changes that come as a result of the sudden changes in the structure at the Cu/SiC interface accompanying some phase transition. Energy dispersive X-ray spectroscopy (EDXS) room temperature scans reveal the presence of O in addition to Cu, C, Si at the interface, and thus copper oxide phases should be considered in interpreting this new phenomenon. It is suggested that TEM investigation together with temperature dependent X-ray diffraction spectroscopy may be able to shed further light on the nature of this interesting bi-directional phase transition. © 2002 Elsevier Science B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/80948
ISSN
2015 Impact Factor: 3.15
2015 SCImago Journal Rankings: 0.930
References

 

DC FieldValueLanguage
dc.contributor.authorZhang, JDen_HK
dc.contributor.authorWeng, HMen_HK
dc.contributor.authorShan, YYen_HK
dc.contributor.authorChing, HMen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorLing, CCen_HK
dc.date.accessioned2010-09-06T08:12:03Z-
dc.date.available2010-09-06T08:12:03Z-
dc.date.issued2002en_HK
dc.identifier.citation9th International Workshop on Slow Positron Beam Techniques, Dresden, Germany, 16-22 September 2001. In Applied Surface Science, 2002, v. 194 n. 1-4, p. 278-282en_HK
dc.identifier.issn0169-4332en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80948-
dc.description.abstractThe slow positron beam facility at the University of Hong Kong has been used to study the Cu/6H-SiC(0 0 0 1) system. The S-E data show the presence of the Cu/SiC interface buried at a depth of 30 nm. Keeping the beam energy fixed and sweeping the sample temperature, sharp discontinuities are noted in the S-parameter at both ∼17 and ∼250 K. The S-parameter transitions, which are in opposite directions, are indicative of sharp free volume changes that come as a result of the sudden changes in the structure at the Cu/SiC interface accompanying some phase transition. Energy dispersive X-ray spectroscopy (EDXS) room temperature scans reveal the presence of O in addition to Cu, C, Si at the interface, and thus copper oxide phases should be considered in interpreting this new phenomenon. It is suggested that TEM investigation together with temperature dependent X-ray diffraction spectroscopy may be able to shed further light on the nature of this interesting bi-directional phase transition. © 2002 Elsevier Science B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsuscen_HK
dc.relation.ispartofApplied Surface Scienceen_HK
dc.rightsApplied Surface Science. Copyright © Elsevier BV.en_HK
dc.subjectCu/SiCen_HK
dc.subjectEDXSen_HK
dc.subjectPhase transitionen_HK
dc.subjectVEPFITen_HK
dc.titleBi-directional phase transition of Cu/6H-SiC(0 0 0 1) system discovered by positron beam studyen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0169-4332&volume=194&spage=278&epage=282&date=2002&atitle=Bi-directional+phase+transition+of+Cu/6H-SiC(0+0+0+1)+system+discovered+by+positron+beam+studyen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/S0169-4332(02)00134-4en_HK
dc.identifier.scopuseid_2-s2.0-0037150943en_HK
dc.identifier.hkuros67403en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037150943&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume194en_HK
dc.identifier.issue1-4en_HK
dc.identifier.spage278en_HK
dc.identifier.epage282en_HK
dc.publisher.placeNetherlandsen_HK
dc.description.other9th International Workshop on Slow Positron Beam Techniques, Dresden, Germany, 16-22 September 2001. In Applied Surface Science, 2002, v. 194 n. 1-4, p. 278-282-
dc.identifier.scopusauthoridZhang, JD=8555988600en_HK
dc.identifier.scopusauthoridWeng, HM=7102468725en_HK
dc.identifier.scopusauthoridShan, YY=7203036700en_HK
dc.identifier.scopusauthoridChing, HM=7003818362en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats