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Showing results 6 to 21 of 21 < previous

	Title	Author(s)	Issue Date	Views
	A reliability comparison of InGaP/GaAs HBTs with and without passivation ledge Journal:Microelectronics Reliability	Van, BP Yang, YF Hsu, CC Lo, HB Yang, ES	2001	143
	Reactive ion etching of gallium nitride using hydrogen bromide plasmas Journal:Electronics Letters	Ping, AT Adesida, I Asif Khan, M Kuznia, JN Yang, YF Yang, ES	1994	157
	Pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP HEMT grown by MOVPE using TBP and TBA Journal:Electronics Letters	Yang, YF Hsu, CC Yang, ES	1994	169
	Prevention of base dopant out-diffusion using a heterostructure-emitter in GaInP/GaAs heterojunction bipolar transistors Journal:Semiconductor Science and Technology	Yang, YF Hsu, CC Yang, ES	1995	144
	Modeling of current gain's temperature dependence in heterostructure-emitter bipolar transistors Journal:IEEE Transactions on Electron Devices	Yang, ES Hsu, CC Lo, HB Yang, YF	2000	163
	Integration of GaInP/GaAs heterojunction bipolar transistors and high electron mobility transistors Journal:IEEE Electron Device Letters	Yang, YF Hsu, CC Yang, ES	1996	145
	InGaP/GaAs power heterostructure-emitter bipolar transistor Journal:Electronics Letters	Yan, BP Yang, ES Yang, YF Wang, XQ Hsu, CC	2001	154
	Improvement of SiGe oxide grown by electron cyclotron resonance using H2O vapor annealing Journal:Applied Physics Letters	Tchikatilov, D Yang, YF Yang, ES	1996	189
	A high-frequency GaInP/GaAs heterojunction bipolar transistor with reduced base-collector capacitance using a selective buried sub-collector Journal:IEEE Electron Device Letters	Yang, YF Hsu, CC Yang, ES Ou, HJ	1996	169
	High frequency GalnP/GaAs heterostructure-emitter bipolar transistor with low offset voltage Journal:Electronics Letters	Ou, HJ Hsu, CC Yang, YF Yang, ES	1997	97
	High frequency and low noise C-doped GalnP/GaAs heterojunction bipolar transistor grown by MOCVD using TBA and TBP Journal:Electronics Letters	Yang, YF Hsu, CC Yang, ES	1996	90
	High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management Journal:IEEE Transactions on Electron Devices	Yan, BP Yang, ES Yang, YF Wang, XQ Hsu, CC	2003	127
	Fabrication and characteristics of a GaInP/GaAs heterojunction bipolar transistor using a selective buried sub-collector Journal:IEEE Transactions on Electron Devices	Yang, YF Hsu, CC Ou, HJ Huang, TC Yang, ES	1997	193
	CCl4-doped semi-insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors Journal:Applied Physics Letters	Hsu, CC Yang, YF Ou, HJ Yang, ES	1996	119
	Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas Journal:Applied Physics Letters	Hsu, CC Yang, YF Ou, HJ Yang, ES Lo, HB	1997	172
	Carbon-doped GaInP/GaAs double heterostructure-emitter bipolar transistors with high current gain Journal:IEEE Transactions on Electron Devices	Yang, YF Hsu, CC Yang, ES	1995	153

Showing results 6 to 21 of 21 < previous