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Article: Prevention of base dopant out-diffusion using a heterostructure-emitter in GaInP/GaAs heterojunction bipolar transistors

TitlePrevention of base dopant out-diffusion using a heterostructure-emitter in GaInP/GaAs heterojunction bipolar transistors
Authors
Issue Date1995
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 1995, v. 10 n. 3, p. 339-343 How to Cite?
AbstractZinc-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) grown by MOCVD were fabricated. Characteristics of HBTs with an undoped spacer layer and an n-type GaAs set-back layer (heterostructure-emitter) between base and emitter were investigated. The results show that the base dopant out-diffusion was effectively prevented in heterostructure-emitter bipolar transistors (HEBTs). In addition, a current gain of 100 at the collector current density of 1*10 -2 A cm -2 and an offset voltage of 57 mV were obtained for Zn-doped HEBTs. In comparison with carbon-doped HBTs, HEBTs Offer a higher current gain at a low current level, a smaller offset voltage and better uniformity in characteristics across the wafer.
Persistent Identifierhttp://hdl.handle.net/10722/155018
ISSN
2015 Impact Factor: 2.098
2015 SCImago Journal Rankings: 0.676
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYang, YFen_US
dc.contributor.authorHsu, CCen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:31:31Z-
dc.date.available2012-08-08T08:31:31Z-
dc.date.issued1995en_US
dc.identifier.citationSemiconductor Science And Technology, 1995, v. 10 n. 3, p. 339-343en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://hdl.handle.net/10722/155018-
dc.description.abstractZinc-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) grown by MOCVD were fabricated. Characteristics of HBTs with an undoped spacer layer and an n-type GaAs set-back layer (heterostructure-emitter) between base and emitter were investigated. The results show that the base dopant out-diffusion was effectively prevented in heterostructure-emitter bipolar transistors (HEBTs). In addition, a current gain of 100 at the collector current density of 1*10 -2 A cm -2 and an offset voltage of 57 mV were obtained for Zn-doped HEBTs. In comparison with carbon-doped HBTs, HEBTs Offer a higher current gain at a low current level, a smaller offset voltage and better uniformity in characteristics across the wafer.en_US
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_US
dc.relation.ispartofSemiconductor Science and Technologyen_US
dc.titlePrevention of base dopant out-diffusion using a heterostructure-emitter in GaInP/GaAs heterojunction bipolar transistorsen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0268-1242/10/3/017en_US
dc.identifier.scopuseid_2-s2.0-0029276729en_US
dc.identifier.volume10en_US
dc.identifier.issue3en_US
dc.identifier.spage339en_US
dc.identifier.epage343en_US
dc.identifier.isiWOS:A1995QL90600017-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridYang, YF=7409383278en_US
dc.identifier.scopusauthoridHsu, CC=7404947020en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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