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Article: Modeling of current gain's temperature dependence in heterostructure-emitter bipolar transistors

TitleModeling of current gain's temperature dependence in heterostructure-emitter bipolar transistors
Authors
Issue Date2000
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 2000, v. 47 n. 7, p. 1315-1319 How to Cite?
AbstractThe temperature dependence of the current gain is investigated for GaAs-based heterostructure-emitter bipolar transistors (HEBT's). With the separation of the p-n junction and the heterojunction, the mechanism of hole injection from the base to emitter in the HEBT is different from that of a conventional HBT. Theoretical results demonstrate that the thermionic emission current plays an important role for the hole current which results in a smaller negative or even positive temperature coefficient for the current gain. Experimental data show that the base current for HEBT's is indeed dominated by thermionic emission as predicted. This finding indicates that the HEBT structure is the suitable choice for high power and high speed applications.
Persistent Identifierhttp://hdl.handle.net/10722/155130
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYang, ESen_US
dc.contributor.authorHsu, CCen_US
dc.contributor.authorLo, HBen_US
dc.contributor.authorYang, YFen_US
dc.date.accessioned2012-08-08T08:31:59Z-
dc.date.available2012-08-08T08:31:59Z-
dc.date.issued2000en_US
dc.identifier.citationIeee Transactions On Electron Devices, 2000, v. 47 n. 7, p. 1315-1319en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10722/155130-
dc.description.abstractThe temperature dependence of the current gain is investigated for GaAs-based heterostructure-emitter bipolar transistors (HEBT's). With the separation of the p-n junction and the heterojunction, the mechanism of hole injection from the base to emitter in the HEBT is different from that of a conventional HBT. Theoretical results demonstrate that the thermionic emission current plays an important role for the hole current which results in a smaller negative or even positive temperature coefficient for the current gain. Experimental data show that the base current for HEBT's is indeed dominated by thermionic emission as predicted. This finding indicates that the HEBT structure is the suitable choice for high power and high speed applications.en_US
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.titleModeling of current gain's temperature dependence in heterostructure-emitter bipolar transistorsen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/16.848270en_US
dc.identifier.scopuseid_2-s2.0-0034229780en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0034229780&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume47en_US
dc.identifier.issue7en_US
dc.identifier.spage1315en_US
dc.identifier.epage1319en_US
dc.identifier.isiWOS:000087898500003-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridHsu, CC=7404947020en_US
dc.identifier.scopusauthoridLo, HB=7202085394en_US
dc.identifier.scopusauthoridYang, YF=7409383278en_US

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