File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: A high-frequency GaInP/GaAs heterojunction bipolar transistor with reduced base-collector capacitance using a selective buried sub-collector

TitleA high-frequency GaInP/GaAs heterojunction bipolar transistor with reduced base-collector capacitance using a selective buried sub-collector
Authors
Issue Date1996
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
Ieee Electron Device Letters, 1996, v. 17 n. 11, p. 531-533 How to Cite?
AbstractA C-doped GaInP/GaAs HBT using a selective buried sub-cellular has been fabricated by two growth steps. The device was fabricated with minimum overlap of the extrinsic base reduced to about half of that of an HBT without selective buried sub-collector while the base resistance remains unchanged. A current gain of 35, f T of 50 GHz and f max of 140 GHz are obtained with this technology.
Persistent Identifierhttp://hdl.handle.net/10722/42743
ISSN
2015 Impact Factor: 2.528
2015 SCImago Journal Rankings: 1.791
References

 

DC FieldValueLanguage
dc.contributor.authorYang, YFen_HK
dc.contributor.authorHsu, CCen_HK
dc.contributor.authorYang, ESen_HK
dc.contributor.authorOu, HJen_HK
dc.date.accessioned2007-03-23T04:31:18Z-
dc.date.available2007-03-23T04:31:18Z-
dc.date.issued1996en_HK
dc.identifier.citationIeee Electron Device Letters, 1996, v. 17 n. 11, p. 531-533en_HK
dc.identifier.issn0741-3106en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42743-
dc.description.abstractA C-doped GaInP/GaAs HBT using a selective buried sub-cellular has been fabricated by two growth steps. The device was fabricated with minimum overlap of the extrinsic base reduced to about half of that of an HBT without selective buried sub-collector while the base resistance remains unchanged. A current gain of 35, f T of 50 GHz and f max of 140 GHz are obtained with this technology.en_HK
dc.format.extent384655 bytes-
dc.format.extent4187 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55en_HK
dc.relation.ispartofIEEE Electron Device Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1996 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.titleA high-frequency GaInP/GaAs heterojunction bipolar transistor with reduced base-collector capacitance using a selective buried sub-collectoren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0741-3106&volume=17&issue=11&spage=531&epage=533&date=1996&atitle=A+high-frequency+GaInP/GaAs+heterojunction+bipolar+transistor+with+reduced+base-collector+capacitance+using+a+selective+buried+sub-collectoren_HK
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_HK
dc.identifier.authorityYang, ES=rp00199en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/55.541771en_HK
dc.identifier.scopuseid_2-s2.0-0030291121en_HK
dc.identifier.hkuros26955-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0030291121&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume17en_HK
dc.identifier.issue11en_HK
dc.identifier.spage531en_HK
dc.identifier.epage533en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYang, YF=54680440200en_HK
dc.identifier.scopusauthoridHsu, CC=7404947020en_HK
dc.identifier.scopusauthoridYang, ES=7202021229en_HK
dc.identifier.scopusauthoridOu, HJ=7005561022en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats