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Article: Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas

TitleCarbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas
Authors
Hsu, CCYang, YFOu, HJYang, ESLo, HB
KeywordsPhysics engineering
Issue Date1997
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1997, v. 71 n. 22, p. 3248-3250 How to Cite?
DOI: http://dx.doi.org/10.1063/1.120305
AbstractThe use of nitrogen as the carrier gas in metalorganic chemical vapor deposition (MOCVD) for the growth of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) is reported. The material quality grown using a nitrogen carrier gas is the same as that of using a hydrogen carrier gas. High carbon doping and hole concentrations of 3 × 1020 and 2 × 1020 cm-3 in GaAs were obtained. The fabricated HBTs showed very good DC and RF performances indicating that nitrogen can be a promising carrier gas for MOCVD growth. © 1997 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42769
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:A1997YJ23000020
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorHsu, CCen_HK
dc.contributor.authorYang, YFen_HK
dc.contributor.authorOu, HJen_HK
dc.contributor.authorYang, ESen_HK
dc.contributor.authorLo, HBen_HK
dc.date.accessioned2007-03-23T04:31:50Z-
dc.date.available2007-03-23T04:31:50Z-
dc.date.issued1997en_HK
dc.identifier.citationApplied Physics Letters, 1997, v. 71 n. 22, p. 3248-3250-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42769-
dc.description.abstractThe use of nitrogen as the carrier gas in metalorganic chemical vapor deposition (MOCVD) for the growth of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) is reported. The material quality grown using a nitrogen carrier gas is the same as that of using a hydrogen carrier gas. High carbon doping and hole concentrations of 3 × 1020 and 2 × 1020 cm-3 in GaAs were obtained. The fabricated HBTs showed very good DC and RF performances indicating that nitrogen can be a promising carrier gas for MOCVD growth. © 1997 American Institute of Physics.en_HK
dc.format.extent56195 bytes-
dc.format.extent4187 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 1997 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 1997, v. 71 n. 22, p. 3248-3250 and may be found at https://doi.org/10.1063/1.120305-
dc.subjectPhysics engineeringen_HK
dc.titleCarbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gasen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=71&issue=22&spage=3248&epage=3250&date=1997&atitle=Carbon-doped+GaInP/GaAs+heterojunction+bipolar+transistors+grown+by+metalorganic+chemical+vapor+deposition+using+nitrogen+as+the+carrier+gasen_HK
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_HK
dc.identifier.authorityYang, ES=rp00199en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.120305en_HK
dc.identifier.scopuseid_2-s2.0-0000227835en_HK
dc.identifier.hkuros34256-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000227835&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume71en_HK
dc.identifier.issue22en_HK
dc.identifier.spage3248en_HK
dc.identifier.epage3250en_HK
dc.identifier.isiWOS:A1997YJ23000020-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHsu, CC=7404947020en_HK
dc.identifier.scopusauthoridYang, YF=7409383278en_HK
dc.identifier.scopusauthoridOu, HJ=7005561022en_HK
dc.identifier.scopusauthoridYang, ES=7202021229en_HK
dc.identifier.scopusauthoridLo, HB=7202085394en_HK
dc.identifier.issnl0003-6951-

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