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Article: Carbon-doped GaInP/GaAs double heterostructure-emitter bipolar transistors with high current gain

TitleCarbon-doped GaInP/GaAs double heterostructure-emitter bipolar transistors with high current gain
Authors
Issue Date1995
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 1995, v. 42 n. 7, p. 1383-1386 How to Cite?
AbstractCarbon-doped GaInP/GaAs double heterostructure-emitter bipolar transistors (DHEBT's) grown by MOCVD were fabricated. A DC current gain of 430 (differential gain of 500) and an offset voltage of 25 mV were obtained. A gain up to 9 was achieved at a low collector current density of 10-3 A/cm2. By using a 600 angstroms set-back layer in the collector, the saturation (knee) voltage was found to be lower than 2 V at a collector current density of 1×104 A/cm2. A cutoff frequency of 23 GHz and a maximum oscillation frequency of 17.8 GHz were obtained.
Persistent Identifierhttp://hdl.handle.net/10722/155021
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYang, YFen_US
dc.contributor.authorHsu, CCen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:31:32Z-
dc.date.available2012-08-08T08:31:32Z-
dc.date.issued1995en_US
dc.identifier.citationIeee Transactions On Electron Devices, 1995, v. 42 n. 7, p. 1383-1386en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10722/155021-
dc.description.abstractCarbon-doped GaInP/GaAs double heterostructure-emitter bipolar transistors (DHEBT's) grown by MOCVD were fabricated. A DC current gain of 430 (differential gain of 500) and an offset voltage of 25 mV were obtained. A gain up to 9 was achieved at a low collector current density of 10-3 A/cm2. By using a 600 angstroms set-back layer in the collector, the saturation (knee) voltage was found to be lower than 2 V at a collector current density of 1×104 A/cm2. A cutoff frequency of 23 GHz and a maximum oscillation frequency of 17.8 GHz were obtained.en_US
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.titleCarbon-doped GaInP/GaAs double heterostructure-emitter bipolar transistors with high current gainen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/16.391227en_US
dc.identifier.scopuseid_2-s2.0-0029342033en_US
dc.identifier.volume42en_US
dc.identifier.issue7en_US
dc.identifier.spage1383en_US
dc.identifier.epage1386en_US
dc.identifier.isiWOS:A1995RE53000028-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridYang, YF=7409383278en_US
dc.identifier.scopusauthoridHsu, CC=7404947020en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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