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Article: Pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP HEMT grown by MOVPE using TBP and TBA

TitlePseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP HEMT grown by MOVPE using TBP and TBA
Authors
Yang, YFHsu, CCYang, ES
KeywordsHigh electron mobility tramsistors
Vapour phase epitaxial growth
Issue Date1994
PublisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/EL
Citation
Electronics Letters, 1994, v. 30 n. 22, p. 1894-1895 How to Cite?
DOI: http://dx.doi.org/10.1049/el:19941277
AbstractA pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP high electron mobility transistor grown by MOVPE using TBP and TBA is reported for the first time. The extrinsic transconductances of 480 and 620mS/mm with the maximum output current of 660 and 780mA/mm were achieved for the 1.2μm gate length device at 300 and 77K, respectively. These data are comparable to those of AlInAs/GaInAs HEMTs grown by MOVPE and MBE indicating the good material quality
Persistent Identifierhttp://hdl.handle.net/10722/155007
ISSN
0013-5194
2023 Impact Factor: 0.7
2023 SCImago Journal Rankings: 0.323
ISI Accession Number ID
WOS:A1994PT07900059

 

DC FieldValueLanguage
dc.contributor.authorYang, YFen_US
dc.contributor.authorHsu, CCen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:31:29Z-
dc.date.available2012-08-08T08:31:29Z-
dc.date.issued1994en_US
dc.identifier.citationElectronics Letters, 1994, v. 30 n. 22, p. 1894-1895en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://hdl.handle.net/10722/155007-
dc.description.abstractA pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP high electron mobility transistor grown by MOVPE using TBP and TBA is reported for the first time. The extrinsic transconductances of 480 and 620mS/mm with the maximum output current of 660 and 780mA/mm were achieved for the 1.2μm gate length device at 300 and 77K, respectively. These data are comparable to those of AlInAs/GaInAs HEMTs grown by MOVPE and MBE indicating the good material qualityen_US
dc.languageengen_US
dc.publisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/ELen_US
dc.relation.ispartofElectronics Lettersen_US
dc.subjectHigh electron mobility tramsistors-
dc.subjectVapour phase epitaxial growth-
dc.titlePseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP HEMT grown by MOVPE using TBP and TBAen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1049/el:19941277en_US
dc.identifier.scopuseid_2-s2.0-0028526549en_US
dc.identifier.volume30en_US
dc.identifier.issue22en_US
dc.identifier.spage1894en_US
dc.identifier.epage1895en_US
dc.identifier.isiWOS:A1994PT07900059-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridYang, YF=7409383278en_US
dc.identifier.scopusauthoridHsu, CC=7404947020en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.issnl0013-5194-

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