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Article: Pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP HEMT grown by MOVPE using TBP and TBA

TitlePseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP HEMT grown by MOVPE using TBP and TBA
Authors
Issue Date1994
PublisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/EL
Citation
Electronics Letters, 1994, v. 30 n. 22, p. 1894-1895 How to Cite?
AbstractA pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP high electron mobility transistor grown by MOVPE using TBP and TBA is reported for the first time. The extrinsic transconductances of 480 and 620mS/mm with the maximum output current of 660 and 780mA/mm were achieved for the 1.2μm gate length device at 300 and 77K, respectively. These data are comparable to those of AlInAs/GaInAs HEMTs grown by MOVPE and MBE indicating the good material quality
Persistent Identifierhttp://hdl.handle.net/10722/155007
ISSN
2015 Impact Factor: 0.854
2015 SCImago Journal Rankings: 0.549
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYang, YFen_US
dc.contributor.authorHsu, CCen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:31:29Z-
dc.date.available2012-08-08T08:31:29Z-
dc.date.issued1994en_US
dc.identifier.citationElectronics Letters, 1994, v. 30 n. 22, p. 1894-1895en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://hdl.handle.net/10722/155007-
dc.description.abstractA pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP high electron mobility transistor grown by MOVPE using TBP and TBA is reported for the first time. The extrinsic transconductances of 480 and 620mS/mm with the maximum output current of 660 and 780mA/mm were achieved for the 1.2μm gate length device at 300 and 77K, respectively. These data are comparable to those of AlInAs/GaInAs HEMTs grown by MOVPE and MBE indicating the good material qualityen_US
dc.languageengen_US
dc.publisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/ELen_US
dc.relation.ispartofElectronics Lettersen_US
dc.titlePseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP HEMT grown by MOVPE using TBP and TBAen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1049/el:19941277en_US
dc.identifier.scopuseid_2-s2.0-0028526549en_US
dc.identifier.volume30en_US
dc.identifier.issue22en_US
dc.identifier.spage1894en_US
dc.identifier.epage1895en_US
dc.identifier.isiWOS:A1994PT07900059-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridYang, YF=7409383278en_US
dc.identifier.scopusauthoridHsu, CC=7404947020en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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