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Article: A reliability comparison of InGaP/GaAs HBTs with and without passivation ledge

TitleA reliability comparison of InGaP/GaAs HBTs with and without passivation ledge
Authors
Van, BPYang, YFHsu, CCLo, HBYang, ES
Issue Date2001
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Citation
Microelectronics Reliability, 2001, v. 41 n. 12, p. 1959-1963 How to Cite?
DOI: http://dx.doi.org/10.1016/S0026-2714(01)00222-0
AbstractInGaP/GaAs heterojunction bipolar transistors (HBTs) with and without passivation ledge in the extrinsic base region were investigated. Gummel plot changes before and after reliability testing were compared. The experimental results demonstrated that the devices featuring the lower quality of the extrinsic base surface are more sensitive to a temperature-current stress. The HBTs with a passivation ledge have an activation energy of 1.41 eV and a mean time to failure (MTTF) of 106 h whereas the HBTs without passivation ledge have an activation energy of 1.24 eV and a MTTF of 105 h. © 2001 Elsevier Science Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155153
ISSN
0026-2714
2021 Impact Factor: 1.418
2020 SCImago Journal Rankings: 0.445
ISI Accession Number ID
WOS:000173036300007
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorVan, BPen_US
dc.contributor.authorYang, YFen_US
dc.contributor.authorHsu, CCen_US
dc.contributor.authorLo, HBen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:32:06Z-
dc.date.available2012-08-08T08:32:06Z-
dc.date.issued2001en_US
dc.identifier.citationMicroelectronics Reliability, 2001, v. 41 n. 12, p. 1959-1963en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://hdl.handle.net/10722/155153-
dc.description.abstractInGaP/GaAs heterojunction bipolar transistors (HBTs) with and without passivation ledge in the extrinsic base region were investigated. Gummel plot changes before and after reliability testing were compared. The experimental results demonstrated that the devices featuring the lower quality of the extrinsic base surface are more sensitive to a temperature-current stress. The HBTs with a passivation ledge have an activation energy of 1.41 eV and a mean time to failure (MTTF) of 106 h whereas the HBTs without passivation ledge have an activation energy of 1.24 eV and a MTTF of 105 h. © 2001 Elsevier Science Ltd. All rights reserved.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrelen_US
dc.relation.ispartofMicroelectronics Reliabilityen_US
dc.titleA reliability comparison of InGaP/GaAs HBTs with and without passivation ledgeen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0026-2714(01)00222-0en_US
dc.identifier.scopuseid_2-s2.0-0035576323en_US
dc.identifier.hkuros68108-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0035576323&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume41en_US
dc.identifier.issue12en_US
dc.identifier.spage1959en_US
dc.identifier.epage1963en_US
dc.identifier.isiWOS:000173036300007-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridVan, BP=15737589600en_US
dc.identifier.scopusauthoridYang, YF=7409383278en_US
dc.identifier.scopusauthoridHsu, CC=7404947020en_US
dc.identifier.scopusauthoridLo, HB=7202085394en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.issnl0026-2714-

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