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Article: High frequency GalnP/GaAs heterostructure-emitter bipolar transistor with low offset voltage

TitleHigh frequency GalnP/GaAs heterostructure-emitter bipolar transistor with low offset voltage
Authors
KeywordsBipolar Transistors
Heterojunction Bipolar Transistors
Issue Date1997
PublisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/EL
Citation
Electronics Letters, 1997, v. 33 n. 8, p. 714-716 How to Cite?
AbstractA carbon doped GaInP/GaAs heterostructure-emitter bipolar transistor (HEBT) grown by MOCVD is reported with high RF performance. A cutoff frequency of 50GHz and maximum oscillation frequency of 90GHz were obtained for the device. An offset voltage as low as 90mV was achieved. It is shown that the GaInP/GaAs HEBT with a high frequency and a low offset voltage is a good candidate for low battery power device applications.
Persistent Identifierhttp://hdl.handle.net/10722/155050
ISSN
2015 Impact Factor: 0.854
2015 SCImago Journal Rankings: 0.549
References

 

DC FieldValueLanguage
dc.contributor.authorOu, HJen_US
dc.contributor.authorHsu, CCen_US
dc.contributor.authorYang, YFen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:31:39Z-
dc.date.available2012-08-08T08:31:39Z-
dc.date.issued1997en_US
dc.identifier.citationElectronics Letters, 1997, v. 33 n. 8, p. 714-716en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://hdl.handle.net/10722/155050-
dc.description.abstractA carbon doped GaInP/GaAs heterostructure-emitter bipolar transistor (HEBT) grown by MOCVD is reported with high RF performance. A cutoff frequency of 50GHz and maximum oscillation frequency of 90GHz were obtained for the device. An offset voltage as low as 90mV was achieved. It is shown that the GaInP/GaAs HEBT with a high frequency and a low offset voltage is a good candidate for low battery power device applications.en_US
dc.languageengen_US
dc.publisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/ELen_US
dc.relation.ispartofElectronics Lettersen_US
dc.subjectBipolar Transistorsen_US
dc.subjectHeterojunction Bipolar Transistorsen_US
dc.titleHigh frequency GalnP/GaAs heterostructure-emitter bipolar transistor with low offset voltageen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0031120712en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031120712&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume33en_US
dc.identifier.issue8en_US
dc.identifier.spage714en_US
dc.identifier.epage716en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridOu, HJ=7005561022en_US
dc.identifier.scopusauthoridHsu, CC=7404947020en_US
dc.identifier.scopusauthoridYang, YF=7409383278en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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