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Article: Fabrication and characteristics of a GaInP/GaAs heterojunction bipolar transistor using a selective buried sub-collector

TitleFabrication and characteristics of a GaInP/GaAs heterojunction bipolar transistor using a selective buried sub-collector
Authors
Issue Date1997
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 1997, v. 44 n. 12, p. 2122-2127 How to Cite?
AbstractA C-doped GaInP/GaAs heterojunction bipolar transistor (HBT) with a selective buried sub-collector has been fabricated by two growth steps. The active HBT region was made on the selective buried sub-collector layer with minimum overlap of the extrinsic base and the sub-collector region resulting in substantial reduction of the base-collector capacitance. The experiment shows that the base-collector capacitance is reduced to about half of that of a conventional HBT while the base resistance remains unchanged resulting in a 40-50% increase in the maximum oscillation frequency. Both DC and RF characteristics are investigated and compared with a conventional HBT. A current gain of 40 cutoff frequency of 50 GHz and maximum oscillation frequency of 140 GHz were obtained for the GaInP/GaAs HBT. It is demonstrated that the selective buried sub-collector provides an effective means for enhancing RF performance of an HBT. © 1997 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/42748
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436
References

 

DC FieldValueLanguage
dc.contributor.authorYang, YFen_HK
dc.contributor.authorHsu, CCen_HK
dc.contributor.authorOu, HJen_HK
dc.contributor.authorHuang, TCen_HK
dc.contributor.authorYang, ESen_HK
dc.date.accessioned2007-03-23T04:31:25Z-
dc.date.available2007-03-23T04:31:25Z-
dc.date.issued1997en_HK
dc.identifier.citationIeee Transactions On Electron Devices, 1997, v. 44 n. 12, p. 2122-2127en_HK
dc.identifier.issn0018-9383en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42748-
dc.description.abstractA C-doped GaInP/GaAs heterojunction bipolar transistor (HBT) with a selective buried sub-collector has been fabricated by two growth steps. The active HBT region was made on the selective buried sub-collector layer with minimum overlap of the extrinsic base and the sub-collector region resulting in substantial reduction of the base-collector capacitance. The experiment shows that the base-collector capacitance is reduced to about half of that of a conventional HBT while the base resistance remains unchanged resulting in a 40-50% increase in the maximum oscillation frequency. Both DC and RF characteristics are investigated and compared with a conventional HBT. A current gain of 40 cutoff frequency of 50 GHz and maximum oscillation frequency of 140 GHz were obtained for the GaInP/GaAs HBT. It is demonstrated that the selective buried sub-collector provides an effective means for enhancing RF performance of an HBT. © 1997 IEEE.en_HK
dc.format.extent168439 bytes-
dc.format.extent4187 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_HK
dc.relation.ispartofIEEE Transactions on Electron Devicesen_HK
dc.rights©1997 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleFabrication and characteristics of a GaInP/GaAs heterojunction bipolar transistor using a selective buried sub-collectoren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9383&volume=44&issue=12&spage=2122&epage=2127 &date=1997&atitle=Fabrication+and+characteristics+of+a+GaInP/GaAs+heterojunction+bipolar+transistor+using+a+selective+buried+sub-collectoren_HK
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_HK
dc.identifier.authorityYang, ES=rp00199en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/16.644624en_HK
dc.identifier.scopuseid_2-s2.0-0031382639en_HK
dc.identifier.hkuros26980-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031382639&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume44en_HK
dc.identifier.issue12en_HK
dc.identifier.spage2122en_HK
dc.identifier.epage2127en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYang, YF=54680440200en_HK
dc.identifier.scopusauthoridHsu, CC=7404947020en_HK
dc.identifier.scopusauthoridOu, HJ=7005561022en_HK
dc.identifier.scopusauthoridHuang, TC=37061242200en_HK
dc.identifier.scopusauthoridYang, ES=7202021229en_HK

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