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Article: Improvement of SiGe oxide grown by electron cyclotron resonance using H2O vapor annealing

TitleImprovement of SiGe oxide grown by electron cyclotron resonance using H2O vapor annealing
Authors
KeywordsPhysics engineering
Issue Date1996
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1996, v. 69 n. 17, p. 2578-2580 How to Cite?
AbstractThe influence of low-temperature annealing in H2O vapor on electron-cyclotron-resonance (ECR) grown SiGe oxides is reported. Annealing the oxides in H2O vapor at 280°C for 3 h 20 min, applied after annealing in forming gas at 450°C for 30 min, has several important effects: It reduces oxide leakage current by up to four orders of magnitude, decreases the density of interface states, and results in a low fixed oxide charge density of - 5.0× 1010 cm-2 in comparison to those of the films subjected to annealing in forming gas only. In addition, higher cumulative dielectric breakdown fields up to 8 MV/cm have been achieved. From the results obtained it is evident that vapor annealing is beneficial for ECR-grown SiGe oxides. © 1996 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42742
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorTchikatilov, Den_HK
dc.contributor.authorYang, YFen_HK
dc.contributor.authorYang, ESen_HK
dc.date.accessioned2007-03-23T04:31:17Z-
dc.date.available2007-03-23T04:31:17Z-
dc.date.issued1996en_HK
dc.identifier.citationApplied Physics Letters, 1996, v. 69 n. 17, p. 2578-2580en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42742-
dc.description.abstractThe influence of low-temperature annealing in H2O vapor on electron-cyclotron-resonance (ECR) grown SiGe oxides is reported. Annealing the oxides in H2O vapor at 280°C for 3 h 20 min, applied after annealing in forming gas at 450°C for 30 min, has several important effects: It reduces oxide leakage current by up to four orders of magnitude, decreases the density of interface states, and results in a low fixed oxide charge density of - 5.0× 1010 cm-2 in comparison to those of the films subjected to annealing in forming gas only. In addition, higher cumulative dielectric breakdown fields up to 8 MV/cm have been achieved. From the results obtained it is evident that vapor annealing is beneficial for ECR-grown SiGe oxides. © 1996 American Institute of Physics.en_HK
dc.format.extent73410 bytes-
dc.format.extent4187 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleImprovement of SiGe oxide grown by electron cyclotron resonance using H2O vapor annealingen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=69&issue=17&spage=2578&epage=2580&date=1996&atitle=Improvement+of+SiGe+oxide+grown+by+electron+cyclotron+resonance+using+H2O+vapor+annealingen_HK
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_HK
dc.identifier.authorityYang, ES=rp00199en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.117705en_HK
dc.identifier.scopuseid_2-s2.0-0001451684en_HK
dc.identifier.hkuros26948-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0001451684&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume69en_HK
dc.identifier.issue17en_HK
dc.identifier.spage2578en_HK
dc.identifier.epage2580en_HK
dc.identifier.isiWOS:A1996VN89800043-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridTchikatilov, D=6505981927en_HK
dc.identifier.scopusauthoridYang, YF=7409383278en_HK
dc.identifier.scopusauthoridYang, ES=7202021229en_HK

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