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Article: High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management

TitleHigh efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management
Authors
Yan, BPYang, ESYang, YFWang, XQHsu, CC
KeywordsCurrent gain
HEBT
InGaP/GaAs HBT
Power performance
Temperature dependence
Issue Date2003
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 2003, v. 50 n. 10, p. 2154-2158 How to Cite?
DOI: http://dx.doi.org/10.1109/TED.2003.816551
AbstractHigh efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors (HEBTs) have been demonstrated. The large signal performance of the HEBTs is characterized. Output power of 0.25 W with power added efficiency (PAE) of 63.5% at 1.9 GHz has been achieved from a 26-finger HEBT with total emitter area of 873.6 μm2. Output power of 1.0 W with PAE of 63% has been obtained from the composition of four above-mentioned power cells at the optimum conditions of impedance matching. The thermal performance of HEBT is presented and the results show better thermal management than conventional HBT. The experimental results demonstrate good power performance and capability of HEBTs.
Persistent Identifierhttp://hdl.handle.net/10722/42982
ISSN
0018-9383
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.785
ISI Accession Number ID
WOS:000185565600021
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorYan, BPen_HK
dc.contributor.authorYang, ESen_HK
dc.contributor.authorYang, YFen_HK
dc.contributor.authorWang, XQen_HK
dc.contributor.authorHsu, CCen_HK
dc.date.accessioned2007-03-23T04:35:59Z-
dc.date.available2007-03-23T04:35:59Z-
dc.date.issued2003en_HK
dc.identifier.citationIeee Transactions On Electron Devices, 2003, v. 50 n. 10, p. 2154-2158en_HK
dc.identifier.issn0018-9383en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42982-
dc.description.abstractHigh efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors (HEBTs) have been demonstrated. The large signal performance of the HEBTs is characterized. Output power of 0.25 W with power added efficiency (PAE) of 63.5% at 1.9 GHz has been achieved from a 26-finger HEBT with total emitter area of 873.6 μm2. Output power of 1.0 W with PAE of 63% has been obtained from the composition of four above-mentioned power cells at the optimum conditions of impedance matching. The thermal performance of HEBT is presented and the results show better thermal management than conventional HBT. The experimental results demonstrate good power performance and capability of HEBTs.en_HK
dc.format.extent349873 bytes-
dc.format.extent4187 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_HK
dc.relation.ispartofIEEE Transactions on Electron Devicesen_HK
dc.rights©2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectCurrent gainen_HK
dc.subjectHEBTen_HK
dc.subjectInGaP/GaAs HBTen_HK
dc.subjectPower performanceen_HK
dc.subjectTemperature dependenceen_HK
dc.titleHigh efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal managementen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9383&volume=50&issue=10&spage=2154&epage=2158&date=2003&atitle=High+efficiency,+low+offset+voltage+InGaP/GaAs+power+heterostructure-emitter+bipolar+transistors+with+advanced+thermal+managementen_HK
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_HK
dc.identifier.authorityYang, ES=rp00199en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/TED.2003.816551en_HK
dc.identifier.scopuseid_2-s2.0-0141905921en_HK
dc.identifier.hkuros94277-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0141905921&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume50en_HK
dc.identifier.issue10en_HK
dc.identifier.spage2154en_HK
dc.identifier.epage2158en_HK
dc.identifier.isiWOS:000185565600021-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYan, BP=7201858607en_HK
dc.identifier.scopusauthoridYang, ES=7202021229en_HK
dc.identifier.scopusauthoridYang, YF=7409383278en_HK
dc.identifier.scopusauthoridWang, XQ=37039138300en_HK
dc.identifier.scopusauthoridHsu, CC=7404947020en_HK
dc.identifier.issnl0018-9383-

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