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Article: CCl4-doped semi-insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors

TitleCCl4-doped semi-insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors
Authors
KeywordsPhysics engineering
Issue Date1996
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1996, v. 69 n. 8, p. 1143-1144 How to Cite?
AbstractThe application of CCl4-doped semi-insulating InP as a buffer layer in a pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP high electron mobility transistor (HEMT) grown by metalorganic chemical vapor deposition is reported. This Al-free InP-base HEMT with a gate length of 1.3 μm has extrinsic transconductances of 420 and 610 mS/mm at 300 and 77 K, respectively. A cutoff frequency of 15 GHz and a maximum oscillation frequency of 40 GHz are obtained. The results demonstrate the CCl4-doped semi-insulating InP is a promising buffer layer for InP-based HEMT. © 1996 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42741
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorHsu, CCen_HK
dc.contributor.authorYang, YFen_HK
dc.contributor.authorOu, HJen_HK
dc.contributor.authorYang, ESen_HK
dc.date.accessioned2007-03-23T04:31:16Z-
dc.date.available2007-03-23T04:31:16Z-
dc.date.issued1996en_HK
dc.identifier.citationApplied Physics Letters, 1996, v. 69 n. 8, p. 1143-1144en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42741-
dc.description.abstractThe application of CCl4-doped semi-insulating InP as a buffer layer in a pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP high electron mobility transistor (HEMT) grown by metalorganic chemical vapor deposition is reported. This Al-free InP-base HEMT with a gate length of 1.3 μm has extrinsic transconductances of 420 and 610 mS/mm at 300 and 77 K, respectively. A cutoff frequency of 15 GHz and a maximum oscillation frequency of 40 GHz are obtained. The results demonstrate the CCl4-doped semi-insulating InP is a promising buffer layer for InP-based HEMT. © 1996 American Institute of Physics.en_HK
dc.format.extent156588 bytes-
dc.format.extent4187 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleCCl4-doped semi-insulating InP as a buffer layer in GaInAs/InP high electron mobility transistorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=69&issue=8&spage=1143&epage=1144&date=1996&atitle=CCl4-doped+semi-insulating+InP+as+a+buffer+layer+in+GaInAs/InP+high+electron+mobility+transistorsen_HK
dc.identifier.authorityYang, ES=rp00199-
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.117085en_HK
dc.identifier.scopuseid_2-s2.0-0542411217-
dc.identifier.hkuros26937-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0542411217&selection=ref&src=s&origin=recordpage-
dc.identifier.volume69-
dc.identifier.issue8-
dc.identifier.spage1143-
dc.identifier.epage1144-
dc.identifier.isiWOS:A1996VD02300041-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridHsu, CC=7404947020-
dc.identifier.scopusauthoridYang, YF=7409383278-
dc.identifier.scopusauthoridOu, HJ=7005561022-
dc.identifier.scopusauthoridYang, ES=7202021229-

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