Browsing "Electrical & Electronic Engineering: Journal/Magazine Articles" by Author rp00130

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Showing results 344 to 362 of 362 < previous 
TitleAuthor(s)Issue DateViews
 
Tailoring the Band Alignment of GaxZn1‐xO/InGaZnO Heterojunction for Modulation‐Doped Transistor Applications
Journal:Physica Status Solidi A: Applications and Materials Science
ZHANG, YYQIAN, LXGE, WBLai, PTLIU, XZ
2018
42
 
Temperature Dependence of Sensing Characteristics for OTFT-Based Hydrogen Sensor
Journal:IEEE Transactions on Electron Devices
LI, BLai, PTTang, WM
2020
11
 
Temperature dependence of the electrical characteristics of ZnO thin film transistor with high-k NbLaO gate dielectric
Journal:Journal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronics
Li, HCLiu, YRGeng, KWWu, WJYao, RHLai, PT
2021
19
 
Temperature-controlled system of PCR chips
Journal:Huazhong Ligong Daxue Xuebao/Journal Huazhong (Central China) University of Science and Technology
Xu, JLai, PTGan, XZhong, D
2001
95
 
A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect
Journal:Chinese Physics
Ji, FXu, JPLai, PT
2007
110
 
A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer
Journal:Microelectronics Reliability
Zou, XXu, JPLi, CXLai, PTChen, WB
2007
215
 
Trap-assisted conduction in nitrided-oxide and re-oxidized nitrided-oxide n-channel metal-oxide-semiconductor field-effect transistors
Journal:Journal of Applied Physics
Fleischer, SLai, PTCheng, YC
1993
178
 
Tunneling-injection-induced turnaround behavior of threshold voltage in thermally nitrided oxide n-channel metal-oxide-semiconductor field-effect transistors
Journal:Journal of Applied Physics
Ma, ZJLai, PTLiu, ZHFleischer, SCheng, YC
1990
205
 
A two-dimensional flow sensor using integrated silicon spreading-resistance temperature detectors
Journal:Review of Scientific Instruments
Liu, BLai, PTZheng, XWu, ZLi, B
1997
103
 
Two-Photon Fluorescence of Ca2+ Migration in Mice With Vibrating Needle
Journal:IEEE Photonics Journal
CHANG, XHe, QLai, PTChan, SCYang, ES
2019
 
Ultra-shallow n +p junction formed by PH 3 and AsH 3 plasma immersion ion implantation
Journal:Microelectronics Reliability
Yang, BLCheung, NWDenholm, SShao, JWong, HLai, PTCheng, YC
2002
195
 
Ultrahigh-Responsivity, Rapid-Recovery, Solar-Blind Photodetector Based on Highly Nonstoichiometric Amorphous Gallium Oxide
Journal:ACS Photonics
Qian, LXWu, ZHZhang, YYLai, PTLiu, XZLi, YR
2017
46
 
Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal-oxide–nitride-oxide-silicon memory
Journal:Thin Solid Films
Liu, LXu, JChen, JXJi, FHUANG, XLai, PT
2012
64
 
Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness
Journal:Thin Solid Films
Xu, JPZou, XLai, PTLi, CXChan, CL
2009
200
 
Vertically mounted InGaN-on-Sapphire light-emitting diodes
Journal:IEEE Transactions on Electron Devices
Zhu, LMa, ZTLai, PTChoi, HW
2011
 
Wide-bandgap high- k Y2 O3 as passivating interlayer for enhancing the electrical properties and high-field reliability of n-Ge metal-oxide-semiconductor capacitors with high- k HfTiO gate dielectric
Journal:Applied Physics Letters
Li, CXLai, PT
2009
149
 
Working Principle of Hydrogen Sensor Based on Pentacene Thin-Film Transistor
Journal:IEEE Electron Device Letters
LI, BLai, PTTang, WM
2017
13
 
Y-Doped BaTiO3 as a Charge-Trapping Layer for Nonvolatile Memory Applications
Journal:IEEE Electron Device Letters
SHI, RHuang, XDSin, JKOLai, PT
2016
 
β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes
Journal:AIP Advances
Qian, LXLiu, XZSheng, TZhang, WLLi, YRLai, PT
2016
13
Showing results 344 to 362 of 362 < previous