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Article: Vertically mounted InGaN-on-Sapphire light-emitting diodes

TitleVertically mounted InGaN-on-Sapphire light-emitting diodes
Authors
Zhu, LMa, ZTLai, PTChoi, HW
KeywordsLight Extraction
Light-Emitting Diodes (LEDs)
Vertically Mounted
Issue Date2011
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
IEEE Transactions On Electron Devices, 2011, v. 58 n. 2, p. 490-494 How to Cite?
DOI: http://dx.doi.org/10.1109/TED.2010.2091960
AbstractAn InGaN/GaN light-emitting diode (LED) chip mounted in a vertical configuration (vmLED) is demonstrated, exhibiting significant enhancement to light extraction, compared with a LED mounted in a conventional planar geometry. By flipping the chip orthogonally, two large illumination surfaces of the device are exposed for direct light extraction. Comparisons, through ray-trace modeling and experiment data with conventional surface-mounted LEDs, indicate that the vmLEDs achieve superior light extraction efficiency. A sapphire-prism-mounted vmLED is further proposed to improve heat sinking, which is well suited for higher current operations. © 2006 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/155600
ISSN
0018-9383
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.785
ISI Accession Number ID
WOS:000286515400029
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU 7118/09E
Funding Information:

Manuscript received September 14, 2010; revised October 25, 2010; accepted October 31, 2010. Date of publication December 6, 2010; date of current version January 21, 2011. This work was supported by a GRF grant of the Research Grant Council of Hong Kong (project HKU 7118/09E). The review of this paper was arranged by Editor L. Lunardi.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZhu, Len_US
dc.contributor.authorMa, ZTen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorChoi, HWen_US
dc.date.accessioned2012-08-08T08:34:18Z-
dc.date.available2012-08-08T08:34:18Z-
dc.date.issued2011en_US
dc.identifier.citationIEEE Transactions On Electron Devices, 2011, v. 58 n. 2, p. 490-494en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10722/155600-
dc.description.abstractAn InGaN/GaN light-emitting diode (LED) chip mounted in a vertical configuration (vmLED) is demonstrated, exhibiting significant enhancement to light extraction, compared with a LED mounted in a conventional planar geometry. By flipping the chip orthogonally, two large illumination surfaces of the device are exposed for direct light extraction. Comparisons, through ray-trace modeling and experiment data with conventional surface-mounted LEDs, indicate that the vmLEDs achieve superior light extraction efficiency. A sapphire-prism-mounted vmLED is further proposed to improve heat sinking, which is well suited for higher current operations. © 2006 IEEE.en_US
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.rights©2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectLight Extractionen_US
dc.subjectLight-Emitting Diodes (LEDs)en_US
dc.subjectVertically Mounteden_US
dc.titleVertically mounted InGaN-on-Sapphire light-emitting diodesen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1109/TED.2010.2091960en_US
dc.identifier.scopuseid_2-s2.0-79151469779en_US
dc.identifier.hkuros183732-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79151469779&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume58en_US
dc.identifier.issue2en_US
dc.identifier.spage490en_US
dc.identifier.epage494en_US
dc.identifier.isiWOS:000286515400029-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridZhu, L=36351290800en_US
dc.identifier.scopusauthoridMa, ZT=8504594000en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.issnl0018-9383-

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