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Article: Working Principle of Hydrogen Sensor Based on Pentacene Thin-Film Transistor

TitleWorking Principle of Hydrogen Sensor Based on Pentacene Thin-Film Transistor
Authors
Issue Date2017
Citation
IEEE Electron Device Letters, 2017, v. 38, p. 1132-1135 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/262324
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLI, B-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2018-09-28T04:57:22Z-
dc.date.available2018-09-28T04:57:22Z-
dc.date.issued2017-
dc.identifier.citationIEEE Electron Device Letters, 2017, v. 38, p. 1132-1135-
dc.identifier.urihttp://hdl.handle.net/10722/262324-
dc.languageeng-
dc.relation.ispartofIEEE Electron Device Letters-
dc.titleWorking Principle of Hydrogen Sensor Based on Pentacene Thin-Film Transistor-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/LED.2017.2716954-
dc.identifier.hkuros292201-
dc.identifier.volume38-
dc.identifier.spage1132-
dc.identifier.epage1135-
dc.identifier.isiWOS:000406429600034-

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