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Article: Wide-bandgap high- k Y2 O3 as passivating interlayer for enhancing the electrical properties and high-field reliability of n-Ge metal-oxide-semiconductor capacitors with high- k HfTiO gate dielectric

TitleWide-bandgap high- k Y2 O3 as passivating interlayer for enhancing the electrical properties and high-field reliability of n-Ge metal-oxide-semiconductor capacitors with high- k HfTiO gate dielectric
Authors
KeywordsPhysics engineering
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2009, v. 95 n. 2 How to Cite?
AbstractHigh- k and wide-bandgap Y2 O3 was proposed as an interlayer in n-Ge metal-oxide-semiconductor (MOS) capacitor with HfTiO gate dielectric for passivating its dielectric/Ge interface, and thus improving its electrical properties and high-field reliability. Results showed that as compared to the Ge MOS capacitor with HfTiO dielectric, the sample with HfTiO/ Y2 O3 dielectric had better electrical properties such as higher dielectric constant (k=24.4), lower interface-state density, and less frequency-dependent C-V dispersion, and also better reliability with less increases in gate leakage and interface states after high-field stressing. This should be attributed to the excellent interfacial quality of Y2 O3 /Ge with no appreciable growth of unstable GeOx at the interface as confirmed by transmission electron microscopy. Moreover, Y 2 O3 can also act as a barrier against the diffusions of Ge, Hf, and Ti, thus further improving the interface quality. © 2009 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/124700
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLi, CXen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2010-10-31T10:49:14Z-
dc.date.available2010-10-31T10:49:14Z-
dc.date.issued2009en_HK
dc.identifier.citationApplied Physics Letters, 2009, v. 95 n. 2en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/124700-
dc.description.abstractHigh- k and wide-bandgap Y2 O3 was proposed as an interlayer in n-Ge metal-oxide-semiconductor (MOS) capacitor with HfTiO gate dielectric for passivating its dielectric/Ge interface, and thus improving its electrical properties and high-field reliability. Results showed that as compared to the Ge MOS capacitor with HfTiO dielectric, the sample with HfTiO/ Y2 O3 dielectric had better electrical properties such as higher dielectric constant (k=24.4), lower interface-state density, and less frequency-dependent C-V dispersion, and also better reliability with less increases in gate leakage and interface states after high-field stressing. This should be attributed to the excellent interfacial quality of Y2 O3 /Ge with no appreciable growth of unstable GeOx at the interface as confirmed by transmission electron microscopy. Moreover, Y 2 O3 can also act as a barrier against the diffusions of Ge, Hf, and Ti, thus further improving the interface quality. © 2009 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsAfter publication: Copyright (year) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (citation of published article) and may be found at (URL/link for published article abstract). Before publication: The following article has been submitted to/accepted by [Name of Journal]. After it is published, it will be found at (URL/link to the entry page of the journal).-
dc.subjectPhysics engineering-
dc.titleWide-bandgap high- k Y2 O3 as passivating interlayer for enhancing the electrical properties and high-field reliability of n-Ge metal-oxide-semiconductor capacitors with high- k HfTiO gate dielectricen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=95&issue=2 article no. 022910&spage=&epage=&date=2009&atitle=Wide-bandgap+high-k+Y2O3+as+passivating+interlayer+for+enhancing+the+electrical+properties+and+high-field+reliability+of+n-Ge+metal-oxidesemiconductor capacitors+with+high-k+HfTiO+gate+dielectricen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3182741en_HK
dc.identifier.scopuseid_2-s2.0-67650751758en_HK
dc.identifier.hkuros179064en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-67650751758&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume95en_HK
dc.identifier.issue2en_HK
dc.identifier.isiWOS:000268089200073-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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