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Article: Tunneling-injection-induced turnaround behavior of threshold voltage in thermally nitrided oxide n-channel metal-oxide-semiconductor field-effect transistors

TitleTunneling-injection-induced turnaround behavior of threshold voltage in thermally nitrided oxide n-channel metal-oxide-semiconductor field-effect transistors
Authors
Issue Date1990
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1990, v. 68 n. 12, p. 6299-6303 How to Cite?
AbstractThe threshold voltage (VT) degradation metal-oxide-semiconductor field-effect transistors (MOSFETs) with thermally nitrided oxide or pure oxide as gate dielectric was determined under Fowler-Nordheim (FN) stressing. A typical VT turnaround behavior was observed for both kinds of devices. The VT for nitrided oxide MOSFETs shifts more negatively than that for pure oxide MOSFETs during the initial period of FN stressing whereas the opposite is true for the positive shift after the critical time at turnaround point. The discovery that the shift of substrate current peak exhibits similar turnaround behavior reinforces the above results. In the meantime, the field-effect electron mobility and the maximum transconductance in the channel for nitrided oxide MOSFETs are only slightly degraded by stressing as compared to that for pure oxide MOSFETs. The VT turnaround behavior can be explained as follows: Net trapped charges in the oxide are initially positive (due to hole traps in the oxide) and result in the negative shift of VT. With increasing injection time, trapped electrons in the oxide as well as acceptortype interface states increase. This results in the positive shift in VT. It is revealed that VT degradation in MOSFETs is dominated by the generation of acceptortype interface states rather than electron trapping in the oxide after the critical time.
Persistent Identifierhttp://hdl.handle.net/10722/155334
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMa, ZJen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorLiu, ZHen_US
dc.contributor.authorFleischer, Sen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:32:57Z-
dc.date.available2012-08-08T08:32:57Z-
dc.date.issued1990en_US
dc.identifier.citationJournal Of Applied Physics, 1990, v. 68 n. 12, p. 6299-6303en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/155334-
dc.description.abstractThe threshold voltage (VT) degradation metal-oxide-semiconductor field-effect transistors (MOSFETs) with thermally nitrided oxide or pure oxide as gate dielectric was determined under Fowler-Nordheim (FN) stressing. A typical VT turnaround behavior was observed for both kinds of devices. The VT for nitrided oxide MOSFETs shifts more negatively than that for pure oxide MOSFETs during the initial period of FN stressing whereas the opposite is true for the positive shift after the critical time at turnaround point. The discovery that the shift of substrate current peak exhibits similar turnaround behavior reinforces the above results. In the meantime, the field-effect electron mobility and the maximum transconductance in the channel for nitrided oxide MOSFETs are only slightly degraded by stressing as compared to that for pure oxide MOSFETs. The VT turnaround behavior can be explained as follows: Net trapped charges in the oxide are initially positive (due to hole traps in the oxide) and result in the negative shift of VT. With increasing injection time, trapped electrons in the oxide as well as acceptortype interface states increase. This results in the positive shift in VT. It is revealed that VT degradation in MOSFETs is dominated by the generation of acceptortype interface states rather than electron trapping in the oxide after the critical time.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleTunneling-injection-induced turnaround behavior of threshold voltage in thermally nitrided oxide n-channel metal-oxide-semiconductor field-effect transistorsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.346872en_US
dc.identifier.scopuseid_2-s2.0-33746982901en_US
dc.identifier.volume68en_US
dc.identifier.issue12en_US
dc.identifier.spage6299en_US
dc.identifier.epage6303en_US
dc.identifier.isiWOS:A1990EP01100047-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridMa, ZJ=7403600924en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridLiu, ZH=7406683158en_US
dc.identifier.scopusauthoridFleischer, S=7103394445en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US

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