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Article: Ultra-shallow n +p junction formed by PH 3 and AsH 3 plasma immersion ion implantation

TitleUltra-shallow n +p junction formed by PH 3 and AsH 3 plasma immersion ion implantation
Authors
Issue Date2002
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Citation
Microelectronics Reliability, 2002, v. 42 n. 12, p. 1985-1989 How to Cite?
AbstractUltra-shallow 28-88 nm n +p junctions formed by PH 3 and AsH 3 plasma immersion ion implantation (PIII) have been studied. The reverse leakage current density and intrinsic bulk leakage current density of the diodes are found to be as low as 4.2 nAcm -2 and 2.4 nAcm -2, respectively. The influences of pre-annealing condition and the carrier gas on the junction depth and the sheet resistance are also studied. It is found that the increase of H or He content in the PH 3 PIII can slow down the phosphorus diffusion and shallower junction can been obtained. Annealing conditions have pronounced effect on the sheet resistance. It was found that sample annealed at 850 °C for 20 s has reverse results to that annealed at 900 °C for 6 s. For AsH 3 PIII samples, it is observed that two-step annealing is more effective to activate the dopant and a lower reverse current density resulted. © 2002 Elsevier Science Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155173
ISSN
2015 Impact Factor: 1.202
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYang, BLen_US
dc.contributor.authorCheung, NWen_US
dc.contributor.authorDenholm, Sen_US
dc.contributor.authorShao, Jen_US
dc.contributor.authorWong, Hen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:32:11Z-
dc.date.available2012-08-08T08:32:11Z-
dc.date.issued2002en_US
dc.identifier.citationMicroelectronics Reliability, 2002, v. 42 n. 12, p. 1985-1989en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://hdl.handle.net/10722/155173-
dc.description.abstractUltra-shallow 28-88 nm n +p junctions formed by PH 3 and AsH 3 plasma immersion ion implantation (PIII) have been studied. The reverse leakage current density and intrinsic bulk leakage current density of the diodes are found to be as low as 4.2 nAcm -2 and 2.4 nAcm -2, respectively. The influences of pre-annealing condition and the carrier gas on the junction depth and the sheet resistance are also studied. It is found that the increase of H or He content in the PH 3 PIII can slow down the phosphorus diffusion and shallower junction can been obtained. Annealing conditions have pronounced effect on the sheet resistance. It was found that sample annealed at 850 °C for 20 s has reverse results to that annealed at 900 °C for 6 s. For AsH 3 PIII samples, it is observed that two-step annealing is more effective to activate the dopant and a lower reverse current density resulted. © 2002 Elsevier Science Ltd. All rights reserved.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrelen_US
dc.relation.ispartofMicroelectronics Reliabilityen_US
dc.titleUltra-shallow n +p junction formed by PH 3 and AsH 3 plasma immersion ion implantationen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0026-2714(02)00099-9en_US
dc.identifier.scopuseid_2-s2.0-0036891289en_US
dc.identifier.hkuros81731-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036891289&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume42en_US
dc.identifier.issue12en_US
dc.identifier.spage1985en_US
dc.identifier.epage1989en_US
dc.identifier.isiWOS:000179954000019-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridYang, BL=7404472939en_US
dc.identifier.scopusauthoridCheung, NW=7202607929en_US
dc.identifier.scopusauthoridDenholm, S=6603724143en_US
dc.identifier.scopusauthoridShao, J=7201361418en_US
dc.identifier.scopusauthoridWong, H=7402864932en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US

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