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- Publisher Website: 10.1109/LED.2016.2615063
- Scopus: eid_2-s2.0-85000733470
- WOS: WOS:000389332700006
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Article: Y-Doped BaTiO3 as a Charge-Trapping Layer for Nonvolatile Memory Applications
Title | Y-Doped BaTiO3 as a Charge-Trapping Layer for Nonvolatile Memory Applications |
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Authors | |
Keywords | BaTiO3 charge-trapping Nonvolatile memory Y doping |
Issue Date | 2016 |
Citation | IEEE Electron Device Letters, 2016, v. 37, p. 1555-1558 How to Cite? |
Abstract | The charge-trapping properties of Y-doped BaTiO3 (Y-BTO) are investigated using an Al/Al2O3/Y-BTO/SiO2/Si structure. Compared with the memory capacitor with pure BaTiO3, the one with Y doping shows better charge-trapping characteristics, including larger memory window (7.4 V at ±14 V sweeping voltage), higher program speed (7.5 V at +14 V for 100 μs) and better retention (96% retained charge at 298 K after 104 s) due to its higher trapping efficiency resulted from the higher trap density of Y-BTO and higher-quality Y-BTO/SiO2 interface, both induced by the Y doping. Therefore, Y-BTO is a promising candidate as the charge-trapping layer for nonvolatile memory applications. |
Persistent Identifier | http://hdl.handle.net/10722/247428 |
ISSN | 2023 Impact Factor: 4.1 2023 SCImago Journal Rankings: 1.250 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | SHI, R | - |
dc.contributor.author | Huang, XD | - |
dc.contributor.author | Sin, JKO | - |
dc.contributor.author | Lai, PT | - |
dc.date.accessioned | 2017-10-18T08:27:06Z | - |
dc.date.available | 2017-10-18T08:27:06Z | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | IEEE Electron Device Letters, 2016, v. 37, p. 1555-1558 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10722/247428 | - |
dc.description.abstract | The charge-trapping properties of Y-doped BaTiO3 (Y-BTO) are investigated using an Al/Al2O3/Y-BTO/SiO2/Si structure. Compared with the memory capacitor with pure BaTiO3, the one with Y doping shows better charge-trapping characteristics, including larger memory window (7.4 V at ±14 V sweeping voltage), higher program speed (7.5 V at +14 V for 100 μs) and better retention (96% retained charge at 298 K after 104 s) due to its higher trapping efficiency resulted from the higher trap density of Y-BTO and higher-quality Y-BTO/SiO2 interface, both induced by the Y doping. Therefore, Y-BTO is a promising candidate as the charge-trapping layer for nonvolatile memory applications. | - |
dc.language | eng | - |
dc.relation.ispartof | IEEE Electron Device Letters | - |
dc.subject | BaTiO3 | - |
dc.subject | charge-trapping | - |
dc.subject | Nonvolatile memory | - |
dc.subject | Y doping | - |
dc.title | Y-Doped BaTiO3 as a Charge-Trapping Layer for Nonvolatile Memory Applications | - |
dc.type | Article | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.identifier.doi | 10.1109/LED.2016.2615063 | - |
dc.identifier.scopus | eid_2-s2.0-85000733470 | - |
dc.identifier.hkuros | 280824 | - |
dc.identifier.volume | 37 | - |
dc.identifier.spage | 1555 | - |
dc.identifier.epage | 1558 | - |
dc.identifier.eissn | 1558-0563 | - |
dc.identifier.isi | WOS:000389332700006 | - |
dc.identifier.issnl | 0741-3106 | - |